Evaluation of Schottky barrier diodes of reduced graphene oxide quantum dots using characteristics curve (I–V) for potential energy applications

Abstract

Innovative materials for energy applications are necessary to reach the sustainable development goals proposed by the United Nations (UN). In this context, the Schottky barrier diodes of Reduced Graphene Oxide Quantum Dots using the Characteristics Curve (I–V) by two modifiers were performed as a full characterization of this new Reduced Graphene Oxide Quantum Dots. The Reduced Graphene Oxide Quantum Dots were extensively characterized by spectroscopies analyses (Infrared spectroscopy, RAMAN, Ultraviolet–Visible), X-ray diffraction, scanning and transmission electron morphological, dynamic light scattering, and surface charge (ZP). Photoluminescence and Photoluminescence Excitation Spectroscopies were performed. Moreover, initial electrical analysis was performed using Schottky barrier diodes of Reduced Graphene Oxide Quantum Dots using the Characteristics Curve (I–V) by two modifiers (UV radiation and heat temperature) and times. The results showed that G, 2D, and D bands are presented. Additionally, the size of the nanomaterial was (1.1 ± 0.3) nm. Furthermore, the nanomaterial showed a high crystallinity (89 %). In addition, photoluminescence showed optical properties with band gaps of 3–5 eV. The Schottky barrier diodes of Reduced Graphene Oxide Quantum Dots using Characteristics Curve (I–V) at different modifiers (UV radiation and heat treatment) showed a high value of the ideality factor of diode because the heterogeneous structure, defects, and oxidation process provoked by the modifiers. Therefore, as the authors’ knowledge, it is the first time that the thermionic emission using the characteristic curve (I–V) with two modifiers is used in reduced graphene oxide quantum dots, and this initial electrical analysis may answer the versatility of reduced graphene oxide quantum dots for energy applications.