{"title":"Analog bipolar resistive switching in Sm doped BaTiO3 thin films for Opto-memristor application","authors":"Vaishali Chandmare , Parveen Sheoran , Kusum Kumari , Atul Thakre , Ashok Kumar , Brahim Dkhil , Hitesh Borkar","doi":"10.1016/j.matchemphys.2025.130764","DOIUrl":null,"url":null,"abstract":"<div><div>Ferroelectric thin films are proving their potential for non-volatile memory applications owing to their inherent polarization. The modulation in the conductance of BaTiO<sub>3</sub> by doping with Sm<sup>3+</sup> ion under dark and illuminated conditions has been studied in this work. Polycrystalline thin films of pristine BaTiO<sub>3</sub> (BTO) and Sm-doped BaTiO<sub>3</sub> (SBTO) were fabricated on FTO coated glass substrates using the Sol-gel spin coating route. BTO and SBTO thin films exhibited a tetragonal phase and a thickness of 500 nm. The current-voltage (<em>I–V</em>) data of the Al/SBTO/FTO device show analog bipolar resistive switching under dark and illuminated conditions. The devices have a R<sub>ON</sub>/R<sub>OFF</sub> ratio of 10 and charge retention up to 10<sup>3</sup> s. The resistive Switching performance of the Al/SBTO/FTO device improved under the illumination of UV light (λ = 395 nm and power of 10 mW/cm<sup>2</sup>), which makes the device suitable for an Opto-memristor. The long-term potentiation (LTP) and long-term depression (LTD) characteristics of the Al/SBTO/FTO device indicate more linear behaviour than the Al/BTO/FTO device in both dark and illuminated conditions. Thus, Al/SBTO/FTO devices can be useful in non-volatile resistive random-access memory (RRAM).</div></div>","PeriodicalId":18227,"journal":{"name":"Materials Chemistry and Physics","volume":"339 ","pages":"Article 130764"},"PeriodicalIF":4.3000,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Chemistry and Physics","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0254058425004109","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Ferroelectric thin films are proving their potential for non-volatile memory applications owing to their inherent polarization. The modulation in the conductance of BaTiO3 by doping with Sm3+ ion under dark and illuminated conditions has been studied in this work. Polycrystalline thin films of pristine BaTiO3 (BTO) and Sm-doped BaTiO3 (SBTO) were fabricated on FTO coated glass substrates using the Sol-gel spin coating route. BTO and SBTO thin films exhibited a tetragonal phase and a thickness of 500 nm. The current-voltage (I–V) data of the Al/SBTO/FTO device show analog bipolar resistive switching under dark and illuminated conditions. The devices have a RON/ROFF ratio of 10 and charge retention up to 103 s. The resistive Switching performance of the Al/SBTO/FTO device improved under the illumination of UV light (λ = 395 nm and power of 10 mW/cm2), which makes the device suitable for an Opto-memristor. The long-term potentiation (LTP) and long-term depression (LTD) characteristics of the Al/SBTO/FTO device indicate more linear behaviour than the Al/BTO/FTO device in both dark and illuminated conditions. Thus, Al/SBTO/FTO devices can be useful in non-volatile resistive random-access memory (RRAM).
期刊介绍:
Materials Chemistry and Physics is devoted to short communications, full-length research papers and feature articles on interrelationships among structure, properties, processing and performance of materials. The Editors welcome manuscripts on thin films, surface and interface science, materials degradation and reliability, metallurgy, semiconductors and optoelectronic materials, fine ceramics, magnetics, superconductors, specialty polymers, nano-materials and composite materials.