All-in-one perovskite memristor with tunable photoresponsivity

IF 22.7 1区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Infomat Pub Date : 2024-12-24 DOI:10.1002/inf2.12619
Guan-Hua Dun, Yuan-Yuan Li, Hai-Nan Zhang, Fan Wu, Xi-Chao Tan, Ken Qin, Yi-Chu He, Ze-Shu Wang, Yu-Hao Wang, Tian Lu, Shi-Wei Tian, Dan Xie, Jia-Li Peng, Xiang-Shun Geng, Xiao-Tong Zhao, Jia-He Zhang, Yu-Han Zhao, Xiaoyu Wu, Ning-Qin Deng, Zheng-Qiang Zhu, Yan Li, Xian-Zhu Liu, Xing Wu, Weida Hu, Peng Zhou, Yang Chai, Mario Lanza, He Tian, Yi Yang, Tian-Ling Ren
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引用次数: 0

Abstract

Photoelectric memristors have shown great potential for future machine visions, via integrating sensing, memory, and computing (namely “all-in-one”) functions in a single device. However, their hard-to-tune photoresponse behavior necessitates extra function modules for signal encoding and modality conversion, impeding such integration. Here, we report an all-in-one memristor with Cs2AgBiBr6 perovskite, where the Br vacancy doping-endowed tunable energy band enables tunable photoresponsivity (TPR) behavior. As a result, the memristor showed a large tunable ratio of 35.9 dB, while its photoresponsivity presented a maximum of 2.7 × 103 mA W−1 and a long-term memory behavior with over 104 s, making it suitable for realizing all-in-one processing tasks. By mapping the algorithm parameters onto the photoresponsivity, we successfully performed both recognition and processing tasks based on the TPR memristor array. Remarkably, compared with conventional complementary metal–oxide–semiconductor counterparts, our demonstrations provided comparable performance but had ~133-fold and ~299-fold reductions in energy consumption, respectively. Our work could facilitate the development of all-in-one smart devices for next-generation machine visions.

Abstract Image

具有可调光致onsponsivity 的一体化过氧化物忆阻器
光电忆阻器通过在单个设备中集成传感、记忆和计算(即“一体化”)功能,在未来的机器视觉中显示出巨大的潜力。然而,它们难以调整的光响应行为需要额外的功能模块来进行信号编码和模态转换,阻碍了这种集成。在这里,我们报道了一种具有Cs2AgBiBr6钙钛矿的一体化记忆电阻器,其中Br空位掺杂赋予的可调谐能带能够实现可调谐的光响应性(TPR)行为。结果表明,该忆阻器具有35.9 dB的大可调比,最大光响应率为2.7 × 103 mA W−1,具有超过104 s的长时记忆性能,适合实现一体化处理任务。通过将算法参数映射到光响应性上,我们成功地完成了基于TPR记忆电阻阵列的识别和处理任务。值得注意的是,与传统的互补金属氧化物半导体相比,我们的演示提供了相当的性能,但能耗分别降低了~133倍和~299倍。我们的工作可以促进下一代机器视觉一体化智能设备的发展。
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来源期刊
Infomat
Infomat MATERIALS SCIENCE, MULTIDISCIPLINARY-
CiteScore
37.70
自引率
3.10%
发文量
111
审稿时长
8 weeks
期刊介绍: InfoMat, an interdisciplinary and open-access journal, caters to the growing scientific interest in novel materials with unique electrical, optical, and magnetic properties, focusing on their applications in the rapid advancement of information technology. The journal serves as a high-quality platform for researchers across diverse scientific areas to share their findings, critical opinions, and foster collaboration between the materials science and information technology communities.
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