A new method for controlling the synthesis of graphite oxide: The effect of hydrogen peroxide

IF 4.3 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Chemistry and Physics Pub Date : 2025-03-17 DOI:10.1016/j.matchemphys.2025.130745

A.G. Bannov , O.V. Netskina , O.V. Nikityonok , P.B. Kurmashov , V. Golovakhin , A.V. Ukhina , E.A. Maskimovskiy , T.S. Gudyma

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Abstract

The role of hydrogen peroxide in the formation of graphite oxide (GO) synthesized using the modified Hummers’ method was investigated. The main parameter to be investigated is the volume of H₂O₂ (32 %) added at the end of the synthesis, ranging from 53 to 316 mL per 5 g of graphite. Scanning electron microscopy, X-ray diffraction, Raman spectroscopy, energy-dispersive X-ray spectroscopy, Boehm titration, and X-ray photoelectron spectroscopy were used for the investigation of GO samples. It was found that the increase in H₂O₂ volume from 53 mL induced a growth in the concentration of carboxylic groups, approaching a maximum at 210 mL (3.04 ± 0.122 mmol/g), and further increases in this volume led to a monotonous decrease in concentration down to 315 mL (2.39 ± 0.062 mmol/g). The exposure of graphite in the reaction mixture after adding H₂O₂ showed a decrease in oxygen concentration in GO, accompanied by a decrease in the concentrations of carboxylic and lactone groups, along with a growth in concentration of phenolic groups (according to Boehm titration).

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研究了过氧化氢在使用改良 Hummers 法合成氧化石墨 (GO) 过程中的作用。研究的主要参数是合成结束时加入的 H2O2（32 %）的体积，范围为每 5 克石墨 53 至 316 毫升。对 GO 样品的研究采用了扫描电子显微镜、X 射线衍射、拉曼光谱、能量色散 X 射线光谱、玻姆滴定和 X 射线光电子能谱。研究发现，H2O2 的体积从 53 mL 开始增加，会导致羧基浓度增加，在 210 mL 时达到最大值（3.04 ± 0.122 mmol/g），进一步增加该体积会导致浓度单调下降，直至 315 mL（2.39 ± 0.062 mmol/g）。加入 H2O2 后，石墨在反应混合物中的暴露情况表明，GO 中的氧浓度降低，同时羧基和内酯基的浓度降低，酚基的浓度增加（根据玻姆滴定法）。

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来源期刊

Materials Chemistry and Physics 工程技术-材料科学：综合

CiteScore

8.70

自引率

4.30%

发文量

1515

审稿时长

69 days

期刊介绍： Materials Chemistry and Physics is devoted to short communications, full-length research papers and feature articles on interrelationships among structure, properties, processing and performance of materials. The Editors welcome manuscripts on thin films, surface and interface science, materials degradation and reliability, metallurgy, semiconductors and optoelectronic materials, fine ceramics, magnetics, superconductors, specialty polymers, nano-materials and composite materials.