Solubility Limit and Microstructure of Rare-Earth Elements in (La1–xRx)3Ga5SiO14 (R = Gd–Ho) Single Crystals and Ceramic Solid Solutions

IF 0.9 4区 材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY
M. E. Voronchikhina, A. V. Matasov, V. Yu. Ivanov, . D. Iskhakova, A. M. Kuzmenko, M. A. Sysoev, A. A. Mukhin
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Abstract

(La1–xRx)3Ga5SiO14 single crystals and ceramic solid solutions where R = Gd–Ho and 0 ≤ х ≤ 0.4 (as-batch) were characterized by X-ray powder diffraction (XRD) and analytical electron microscopy in order to determine the solubility limits of lanthanides in the langasite structure. Langasite-based solid solutions are the dominant phase up to the highest concentrations, but at x ≥ 0.15 for holmium and x ≥ 0.2 for terbium, garnet R3Ga5O12 and La2SiO5-type impurity phases start to precipitate. Langasite single crystals have homogeneous structure where Tb, Dy, or Ho substitutes for La up to х = 0.05, and where Gd does up to х = 0.2. At х > 0.1, however, inclusions of impurity phases with the above structures appear in (La1–xTbx)3Ga5SiO14 crystals. The magnetization curves of (La1–xRx)3Ga5SiO14 (R = Ho and Tb) crystals measured at 1.85–2 K exhibit strong magnetocrystalline anisotropy, where the magnetic moment per R3+ ion is roughly the same for all of the heavy lanthanide concentrations studied. The temperature-and-frequency dependent dielectric constant and dielectric loss tangent of (La1–xHox)3Ga5SiO14 (x ≤ 0.2) and (La1–xTbx)3Ga5SiO14 (x ≤ 0.3) ceramic samples were studied in the range T = 77–700 K at frequencies f from 1 kHz to 1 MHz. Debye-type relaxation with an activation energy of about 2 eV was detected.

Abstract Image

稀土元素在(La1-xRx)3Ga5SiO14 (R = Gd-Ho)单晶和陶瓷固溶体中的溶解度极限和微观结构
(La1-xRx)3Ga5SiO14 单晶体和陶瓷固溶体(其中 R = Gd-Ho,0 ≤ х ≤ 0.4(同批次))通过 X 射线粉末衍射 (XRD) 和分析电子显微镜进行了表征,以确定镧系元素在镧系元素结构中的溶解极限。镧系固溶体是最高浓度下的主要相,但当钬的 x ≥ 0.15 和铽的 x ≥ 0.2 时,开始析出石榴石 R3Ga5O12 和 La2SiO5 型杂质相。朗嘎石单结晶具有均匀的结构,其中 Tb、Dy 或 Ho 在 х = 0.05 时可替代 La,而 Gd 在 х = 0.2 时可替代 La。然而,当 х > 0.1 时,(La1-xTbx)3Ga5SiO14 晶体中会出现具有上述结构的杂质相夹杂物。在 1.85-2 K 条件下测量的 (La1-xRx)3Ga5SiO14 晶体(R = Ho 和 Tb)的磁化曲线显示出强烈的磁晶各向异性,其中每个 R3+ 离子的磁矩在所有研究的重镧系元素浓度下大致相同。研究了 (La1-xHox)3Ga5SiO14 (x ≤ 0.2) 和 (La1-xTbx)3Ga5SiO14 (x ≤ 0.3) 陶瓷样品的介电常数和介电损耗正切随温度和频率的变化,研究范围为 T = 77-700 K,频率 f 为 1 kHz 至 1 MHz。检测到了活化能约为 2 eV 的德拜型弛豫。
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来源期刊
Inorganic Materials
Inorganic Materials 工程技术-材料科学:综合
CiteScore
1.40
自引率
25.00%
发文量
80
审稿时长
3-6 weeks
期刊介绍: Inorganic Materials is a journal that publishes reviews and original articles devoted to chemistry, physics, and applications of various inorganic materials including high-purity substances and materials. The journal discusses phase equilibria, including P–T–X diagrams, and the fundamentals of inorganic materials science, which determines preparatory conditions for compounds of various compositions with specified deviations from stoichiometry. Inorganic Materials is a multidisciplinary journal covering all classes of inorganic materials. The journal welcomes manuscripts from all countries in the English or Russian language.
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