A multiphysics model of TCS/C2H4/H2 system involving chemical reaction kinetics for silicon carbide chemical vapor deposition

Abstract

4H-SiC epitaxial growth is a complex process of chemical and physical phenomena occurring at different time and length scales, while the understanding of the deposition mechanism at the multiscale is still very poor. Responding to the challenge, a highly accurate multiphysics model for the TCS/C₂H₄/H₂ system was constructed by integrating the chemical reaction kinetics in detail within a three-dimensional simulation framework. Through systematic exploration, we explored the surface reaction mechanism and evaluated the coupled influence of critical process parameters, including temperature, susceptor rotation speed, C/Si ratio, and center/side flow ratio on growth rate and uniformity. Furthermore, the optimal process parameters were determined through orthogonal experimental method. And simulations show the possibility to obtain high-quality SiC epitaxial layers at the border between surface carbon-limited and silicon-limited regimes for TCS/C₂H₄/H₂ system. This research presents a valuable modeling approach that improves the understanding of SiC deposition, thereby facilitating advancements in material fabrication techniques.