Laser-assisted tunneling and Hartman effect in graphene under scalar potential and exchange fields

IF 2.9 3区 物理与天体物理 Q3 NANOSCIENCE & NANOTECHNOLOGY
Rachid El Aitouni , Ahmed Jellal , Pablo Díaz , David Laroze
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引用次数: 0

Abstract

We study the tunneling effect of Dirac fermions in a graphene sheet by introducing a potential barrier in a region of width D exposed to laser field. This sheet is placed on a boron nitride/ferromagnetic substrate such as cobalt or nickel. By using the Floquet theory, we determine the solutions of the energy spectrum. We calculate the transmission and reflection coefficients by applying the boundary conditions along with the transfer matrix method. These coefficients help determine their probabilities by current densities and group delay times by their phases. We numerically show that the laser field plays a crucial role in this structure, as it completely suppresses Klein tunneling compared to the case without laser. Furthermore, in contrast to the Hartman effect, the group delay time becomes dependent on the barrier width with the appearance of additional peaks. This suggests that fermion-field interactions cause additional delays within the barrier and also help to reduce spin coupling. Adding BN layers increases the interval of transmission suppression and completely eliminates coupling after the addition of three BN layers. Total reflection is observed for incident fermions with an angle less than 1 or greater than one.
标量势场和交换场下石墨烯的激光辅助隧穿和哈特曼效应
通过在暴露于激光场的宽度为D的区域引入势垒,研究了狄拉克费米子在石墨烯片中的隧穿效应。该薄片被放置在氮化硼/铁磁性衬底上,如钴或镍。利用Floquet理论,确定了能量谱的解。利用边界条件和传递矩阵法计算了透射系数和反射系数。这些系数有助于根据电流密度确定它们的概率,并根据它们的相位确定群延迟时间。数值计算表明,激光场在该结构中起着至关重要的作用,因为与没有激光的情况相比,激光场完全抑制了克莱因隧穿。此外,与哈特曼效应相反,随着附加峰的出现,群延迟时间变得依赖于势垒宽度。这表明费米子场相互作用在势垒内造成额外的延迟,也有助于减少自旋耦合。增加BN层增加了传输抑制的间隔,完全消除了三层BN层后的耦合。观察到入射费米子的全反射角小于- 1或大于1。
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来源期刊
CiteScore
7.30
自引率
6.10%
发文量
356
审稿时长
65 days
期刊介绍: Physica E: Low-dimensional systems and nanostructures contains papers and invited review articles on the fundamental and applied aspects of physics in low-dimensional electron systems, in semiconductor heterostructures, oxide interfaces, quantum wells and superlattices, quantum wires and dots, novel quantum states of matter such as topological insulators, and Weyl semimetals. Both theoretical and experimental contributions are invited. Topics suitable for publication in this journal include spin related phenomena, optical and transport properties, many-body effects, integer and fractional quantum Hall effects, quantum spin Hall effect, single electron effects and devices, Majorana fermions, and other novel phenomena. Keywords: • topological insulators/superconductors, majorana fermions, Wyel semimetals; • quantum and neuromorphic computing/quantum information physics and devices based on low dimensional systems; • layered superconductivity, low dimensional systems with superconducting proximity effect; • 2D materials such as transition metal dichalcogenides; • oxide heterostructures including ZnO, SrTiO3 etc; • carbon nanostructures (graphene, carbon nanotubes, diamond NV center, etc.) • quantum wells and superlattices; • quantum Hall effect, quantum spin Hall effect, quantum anomalous Hall effect; • optical- and phonons-related phenomena; • magnetic-semiconductor structures; • charge/spin-, magnon-, skyrmion-, Cooper pair- and majorana fermion- transport and tunneling; • ultra-fast nonlinear optical phenomena; • novel devices and applications (such as high performance sensor, solar cell, etc); • novel growth and fabrication techniques for nanostructures
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