V. S. Sulyaeva, M. M. Syrokvashin, A. K. Kozhevnikov, E. N. Ermakova
{"title":"Growth of TiSiN Films by Room-Temperature Reactive Magnetron Sputtering","authors":"V. S. Sulyaeva, M. M. Syrokvashin, A. K. Kozhevnikov, E. N. Ermakova","doi":"10.1134/S0020168524700948","DOIUrl":null,"url":null,"abstract":"<p>TiSiN films have been grown by room-temperature reactive magnetron sputtering using a TiSi (10%) cathode of mixed composition. X-ray diffraction, elemental analysis, and X-ray photoelectron spectroscopy data indicated the formation of an amorphous phase containing nanocrystalline TiN inclusions having preferential orientation along the (200) plane, without silicon nitride inclusions. The obtained samples possessed hardness up to 31 GPa. Vacuum annealing at 500°C for 1 h led to an increase in the degree of crystallinity of the films, without changes in preferential orientation. X-ray diffraction characterization of the films annealed in air at temperatures of 500 and 700°C showed that they were oxidation-resistant at moderate temperatures.</p>","PeriodicalId":585,"journal":{"name":"Inorganic Materials","volume":"60 6","pages":"723 - 730"},"PeriodicalIF":0.9000,"publicationDate":"2025-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Inorganic Materials","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1134/S0020168524700948","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
TiSiN films have been grown by room-temperature reactive magnetron sputtering using a TiSi (10%) cathode of mixed composition. X-ray diffraction, elemental analysis, and X-ray photoelectron spectroscopy data indicated the formation of an amorphous phase containing nanocrystalline TiN inclusions having preferential orientation along the (200) plane, without silicon nitride inclusions. The obtained samples possessed hardness up to 31 GPa. Vacuum annealing at 500°C for 1 h led to an increase in the degree of crystallinity of the films, without changes in preferential orientation. X-ray diffraction characterization of the films annealed in air at temperatures of 500 and 700°C showed that they were oxidation-resistant at moderate temperatures.
期刊介绍:
Inorganic Materials is a journal that publishes reviews and original articles devoted to chemistry, physics, and applications of various inorganic materials including high-purity substances and materials. The journal discusses phase equilibria, including P–T–X diagrams, and the fundamentals of inorganic materials science, which determines preparatory conditions for compounds of various compositions with specified deviations from stoichiometry. Inorganic Materials is a multidisciplinary journal covering all classes of inorganic materials. The journal welcomes manuscripts from all countries in the English or Russian language.