S. V. Bulyarskiy, K. I. Litvinova, A. A. Shibalova
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引用次数: 0
Abstract
We have studied the effect of pulse annealing on the crystallization of hafnium oxide films grown by atomic layer deposition and constructed a model for the crystallization process. Experimental data and simulation results suggest that the crystallization mechanism is rather complex and depends on temperature. At annealing temperatures in the range 600–700°C, the crystallization process follows a diffusion mechanism: oxygen diffuses into the film and interacts with oxygen vacancies and excess hafnium, resulting in nanocrystal growth. At higher temperatures, the activation energy for the crystallization process increases and exceeds the activation energy for oxygen diffusion. We assume that the crystallization process can involve double ionized oxygen vacancies.
期刊介绍：
Inorganic Materials is a journal that publishes reviews and original articles devoted to chemistry, physics, and applications of various inorganic materials including high-purity substances and materials. The journal discusses phase equilibria, including P–T–X diagrams, and the fundamentals of inorganic materials science, which determines preparatory conditions for compounds of various compositions with specified deviations from stoichiometry. Inorganic Materials is a multidisciplinary journal covering all classes of inorganic materials. The journal welcomes manuscripts from all countries in the English or Russian language.
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