Investigation of Charge Carrier Mobility of Tris(8-hydroxyquinolinato)aluminum Doped with Substituted Lithium Quinolate Complexes

IF 1.1 4区 材料科学 Q3 METALLURGY & METALLURGICAL ENGINEERING
Anurag Sangwan, Vivek Kumar, Sandeep Kumar, Amit Kumar
{"title":"Investigation of Charge Carrier Mobility of Tris(8-hydroxyquinolinato)aluminum Doped with Substituted Lithium Quinolate Complexes","authors":"Anurag Sangwan,&nbsp;Vivek Kumar,&nbsp;Sandeep Kumar,&nbsp;Amit Kumar","doi":"10.1134/S2070205124702289","DOIUrl":null,"url":null,"abstract":"<p>The charge carrier mobility of doped tris(8-hydroxyquinolinato)aluminum (AlQ<sub>3</sub>) have been investigated in detail. Substituted lithium quinolate complexes are used as molecular <i>n</i>-type dopant in AlQ<sub>3</sub>. Dopant concentration dependent charge carrier mobility have been investigated in detail and compared. Effect of substituent (electron donating or withdrawing) on the dopant molecules have also been analysed. In this study, bilayer device structure was fabricated on the patterned ITO coated glass substrate. Applied field dependent mobility of the fabricated devices were investigated and analysed. The highest electron mobility of 1.63 × 10<sup>–4</sup> and 6.92 × 10<sup>–5</sup> cm<sup>2</sup>/V s for 20% LiMeQ and LiClQ doped AlQ<sub>3</sub>, respectively at the applied electric field of 1050 (V/cm)<sup>1/2</sup>.</p>","PeriodicalId":745,"journal":{"name":"Protection of Metals and Physical Chemistry of Surfaces","volume":"60 5","pages":"906 - 911"},"PeriodicalIF":1.1000,"publicationDate":"2025-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Protection of Metals and Physical Chemistry of Surfaces","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1134/S2070205124702289","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"METALLURGY & METALLURGICAL ENGINEERING","Score":null,"Total":0}
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Abstract

The charge carrier mobility of doped tris(8-hydroxyquinolinato)aluminum (AlQ3) have been investigated in detail. Substituted lithium quinolate complexes are used as molecular n-type dopant in AlQ3. Dopant concentration dependent charge carrier mobility have been investigated in detail and compared. Effect of substituent (electron donating or withdrawing) on the dopant molecules have also been analysed. In this study, bilayer device structure was fabricated on the patterned ITO coated glass substrate. Applied field dependent mobility of the fabricated devices were investigated and analysed. The highest electron mobility of 1.63 × 10–4 and 6.92 × 10–5 cm2/V s for 20% LiMeQ and LiClQ doped AlQ3, respectively at the applied electric field of 1050 (V/cm)1/2.

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来源期刊
CiteScore
1.90
自引率
18.20%
发文量
90
审稿时长
4-8 weeks
期刊介绍: Protection of Metals and Physical Chemistry of Surfaces is an international peer reviewed journal that publishes articles covering all aspects of the physical chemistry of materials and interfaces in various environments. The journal covers all related problems of modern physical chemistry and materials science, including: physicochemical processes at interfaces; adsorption phenomena; complexing from molecular and supramolecular structures at the interfaces to new substances, materials and coatings; nanoscale and nanostructured materials and coatings, composed and dispersed materials; physicochemical problems of corrosion, degradation and protection; investigation methods for surface and interface systems, processes, structures, materials and coatings. No principe restrictions exist related systems, types of processes, methods of control and study. The journal welcomes conceptual, theoretical, experimental, methodological, instrumental, environmental, and all other possible studies.
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