The Effect of Physical Structural Properties on Electrochemical Properties of Ruthenium Oxide for Neural Stimulating and Recording Electrodes.

Abstract

Recently, there has been a growing interest in ruthenium oxide (RuOx) as an alternative mixed-conductor oxide to SIROF as an electrode coating. RuOx is recognized as a faradic charge-injection coating with high CSCc, long-term pulsing stability, and low impedance. We examined how the structural properties of sputter-deposited RuOx influence its electrochemical performance as an electrode coating for neural stimulation and recording. Thin film RuOx was deposited under various pressures: 5 mTorr, 15 mTorr, 30 mTorr, and 60 mTorr on wafer-based planar test structures. Electrochemical characterizations, including electrochemical impedance spectroscopy (EIS), cyclic voltammetry (CV), and voltage transient (VT), were employed. The structure of RuOx films was characterized by scanning electron microscope (SEM). Our findings revealed that the sputtering pressure significantly influences the growth of the RuOx film, subsequently affecting its electrochemical performance. The results indicate that the electrochemical performance of RuOx can be optimized by adjusting the deposition conditions to achieve a favorable balance between electronic and ionic conductivity.Clinical Relevance- This research underscores the potential for optimizing the structural properties of RuOx to enhance its electrochemical capabilities for neural stimulation and recording.