The large electrical-resistance enhancement of piezoelectric single crystals Sr3Ga2Ge4O14 by compensating for vacancy defects with the doping of high-valence Sm3+ ions

IF 2.6 3区化学 Q2 CHEMISTRY, MULTIDISCIPLINARY

CrystEngComm Pub Date : 2025-02-07 DOI:10.1039/D4CE01180E

Zhongjun Tian, Linwen Jiang, Zhigang Sun, Chen Yang, Qiang Zhou, Liping Shang and Yanqing Zheng

{"title":"The large electrical-resistance enhancement of piezoelectric single crystals Sr3Ga2Ge4O14 by compensating for vacancy defects with the doping of high-valence Sm3+ ions","authors":"Zhongjun Tian, Linwen Jiang, Zhigang Sun, Chen Yang, Qiang Zhou, Liping Shang and Yanqing Zheng","doi":"10.1039/D4CE01180E","DOIUrl":null,"url":null,"abstract":"Sr3Ga2Ge4O14 (SGG) crystals are widely used in the high-temperature piezoelectric field because of their excellent piezoelectric properties. In this paper, the Sr2+ lattice of the SGG crystal is replaced with high-valence Sm3+ with a close radius to improve its high-temperature resistivity and to obtain more stable electroelastic properties. The full width at half maximum (FWHM) of the X-ray rocking curves of (Sm0.01Sr2.99)3Ga2Ge4O14 (SSGG) and SGG crystals is 29.62′′ and 32.04′′, respectively. In the range of 50 °C to 700 °C, the dielectric constant εT11/εT0 of the SSGG crystal increases from 16.51 to 18.49, and the piezoelectric coefficient d11 also increases from 7.32 pC N−1 to 7.97 pC N−1. At 700 °C, the resistivity of the X-cut plates of SSGG and SGG crystals is about 1.52 × 107 Ω cm and 4.6 × 106 Ω cm, respectively. The SSGG crystal contains larger forbidden bandwidths and fewer oxygen vacancies, as measured by UV-vis DRS and X-ray photoelectron spectroscopy analyses, and the reduction of oxygen vacancies can effectively shorten the carrier lifetime, which is a key factor in increasing the resistivity.","PeriodicalId":70,"journal":{"name":"CrystEngComm","volume":" 10","pages":" 1474-1482"},"PeriodicalIF":2.6000,"publicationDate":"2025-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"CrystEngComm","FirstCategoryId":"92","ListUrlMain":"https://pubs.rsc.org/en/content/articlelanding/2025/ce/d4ce01180e","RegionNum":3,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

Abstract

Sr₃Ga₂Ge₄O₁₄ (SGG) crystals are widely used in the high-temperature piezoelectric field because of their excellent piezoelectric properties. In this paper, the Sr²⁺ lattice of the SGG crystal is replaced with high-valence Sm³⁺ with a close radius to improve its high-temperature resistivity and to obtain more stable electroelastic properties. The full width at half maximum (FWHM) of the X-ray rocking curves of (Sm_0.01Sr_2.99)₃Ga₂Ge₄O₁₄ (SSGG) and SGG crystals is 29.62′′ and 32.04′′, respectively. In the range of 50 °C to 700 °C, the dielectric constant ε^T₁₁/ε^T₀ of the SSGG crystal increases from 16.51 to 18.49, and the piezoelectric coefficient d₁₁ also increases from 7.32 pC N⁻¹ to 7.97 pC N⁻¹. At 700 °C, the resistivity of the X-cut plates of SSGG and SGG crystals is about 1.52 × 10⁷ Ω cm and 4.6 × 10⁶ Ω cm, respectively. The SSGG crystal contains larger forbidden bandwidths and fewer oxygen vacancies, as measured by UV-vis DRS and X-ray photoelectron spectroscopy analyses, and the reduction of oxygen vacancies can effectively shorten the carrier lifetime, which is a key factor in increasing the resistivity.