Achieving n- and p-type Ohmic contacts in vertical graphene/CrSi2N4 heterostructure: Role of electric field

IF 2.9 3区 物理与天体物理 Q3 NANOSCIENCE & NANOTECHNOLOGY
Meng Chen , Shuo Liu , Mengying Zhao , Hong Li , Fengbin Liu
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引用次数: 0

Abstract

Single-layer CrSi2N4 belongs to an emerging class of air-stable two-dimensional semiconductors (MA2X4) with excellent electrical properties. We engineered the vertical contact properties between graphene and single-layer CrSi2N4 using first-principles calculations. The vertical graphene/CrSi2N4 contact is n-type Ohmic at ground state, and it transforms to p-type Ohmic contact at over 1 V/Å of the applied electric field. On the other hand, a change in the interlayer spacing has no significant effect on the Schottky barrier. Our study suggests that the vertical graphene/CrSi2N4 heterostructure is a potential material for application in nanoelectronics.

Abstract Image

在垂直石墨烯/CrSi2N4异质结构中实现n型和p型欧姆接触:电场的作用
单层CrSi2N4属于一类新兴的空气稳定二维半导体(MA2X4),具有优异的电性能。我们利用第一性原理计算设计了石墨烯和单层CrSi2N4之间的垂直接触特性。垂直石墨烯/CrSi2N4触点在基态为n型欧姆,在超过1 V/Å的电场作用下转变为p型欧姆。另一方面,层间距的变化对肖特基势垒没有显著影响。我们的研究表明,垂直石墨烯/CrSi2N4异质结构是一种潜在的纳米电子学应用材料。
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来源期刊
CiteScore
7.30
自引率
6.10%
发文量
356
审稿时长
65 days
期刊介绍: Physica E: Low-dimensional systems and nanostructures contains papers and invited review articles on the fundamental and applied aspects of physics in low-dimensional electron systems, in semiconductor heterostructures, oxide interfaces, quantum wells and superlattices, quantum wires and dots, novel quantum states of matter such as topological insulators, and Weyl semimetals. Both theoretical and experimental contributions are invited. Topics suitable for publication in this journal include spin related phenomena, optical and transport properties, many-body effects, integer and fractional quantum Hall effects, quantum spin Hall effect, single electron effects and devices, Majorana fermions, and other novel phenomena. Keywords: • topological insulators/superconductors, majorana fermions, Wyel semimetals; • quantum and neuromorphic computing/quantum information physics and devices based on low dimensional systems; • layered superconductivity, low dimensional systems with superconducting proximity effect; • 2D materials such as transition metal dichalcogenides; • oxide heterostructures including ZnO, SrTiO3 etc; • carbon nanostructures (graphene, carbon nanotubes, diamond NV center, etc.) • quantum wells and superlattices; • quantum Hall effect, quantum spin Hall effect, quantum anomalous Hall effect; • optical- and phonons-related phenomena; • magnetic-semiconductor structures; • charge/spin-, magnon-, skyrmion-, Cooper pair- and majorana fermion- transport and tunneling; • ultra-fast nonlinear optical phenomena; • novel devices and applications (such as high performance sensor, solar cell, etc); • novel growth and fabrication techniques for nanostructures
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