Meng Chen , Shuo Liu , Mengying Zhao , Hong Li , Fengbin Liu
{"title":"Achieving n- and p-type Ohmic contacts in vertical graphene/CrSi2N4 heterostructure: Role of electric field","authors":"Meng Chen , Shuo Liu , Mengying Zhao , Hong Li , Fengbin Liu","doi":"10.1016/j.physe.2025.116201","DOIUrl":null,"url":null,"abstract":"<div><div>Single-layer CrSi<sub>2</sub>N<sub>4</sub> belongs to an emerging class of air-stable two-dimensional semiconductors (MA<sub>2</sub>X<sub>4</sub>) with excellent electrical properties. We engineered the vertical contact properties between graphene and single-layer CrSi<sub>2</sub>N<sub>4</sub> using first-principles calculations. The vertical graphene/CrSi<sub>2</sub>N<sub>4</sub> contact is <em>n</em>-type Ohmic at ground state, and it transforms to <em>p</em>-type Ohmic contact at over 1 V/Å of the applied electric field. On the other hand, a change in the interlayer spacing has no significant effect on the Schottky barrier. Our study suggests that the vertical graphene/CrSi<sub>2</sub>N<sub>4</sub> heterostructure is a potential material for application in nanoelectronics.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"170 ","pages":"Article 116201"},"PeriodicalIF":2.9000,"publicationDate":"2025-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica E-low-dimensional Systems & Nanostructures","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1386947725000268","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"NANOSCIENCE & NANOTECHNOLOGY","Score":null,"Total":0}
引用次数: 0
Abstract
Single-layer CrSi2N4 belongs to an emerging class of air-stable two-dimensional semiconductors (MA2X4) with excellent electrical properties. We engineered the vertical contact properties between graphene and single-layer CrSi2N4 using first-principles calculations. The vertical graphene/CrSi2N4 contact is n-type Ohmic at ground state, and it transforms to p-type Ohmic contact at over 1 V/Å of the applied electric field. On the other hand, a change in the interlayer spacing has no significant effect on the Schottky barrier. Our study suggests that the vertical graphene/CrSi2N4 heterostructure is a potential material for application in nanoelectronics.
期刊介绍:
Physica E: Low-dimensional systems and nanostructures contains papers and invited review articles on the fundamental and applied aspects of physics in low-dimensional electron systems, in semiconductor heterostructures, oxide interfaces, quantum wells and superlattices, quantum wires and dots, novel quantum states of matter such as topological insulators, and Weyl semimetals.
Both theoretical and experimental contributions are invited. Topics suitable for publication in this journal include spin related phenomena, optical and transport properties, many-body effects, integer and fractional quantum Hall effects, quantum spin Hall effect, single electron effects and devices, Majorana fermions, and other novel phenomena.
Keywords:
• topological insulators/superconductors, majorana fermions, Wyel semimetals;
• quantum and neuromorphic computing/quantum information physics and devices based on low dimensional systems;
• layered superconductivity, low dimensional systems with superconducting proximity effect;
• 2D materials such as transition metal dichalcogenides;
• oxide heterostructures including ZnO, SrTiO3 etc;
• carbon nanostructures (graphene, carbon nanotubes, diamond NV center, etc.)
• quantum wells and superlattices;
• quantum Hall effect, quantum spin Hall effect, quantum anomalous Hall effect;
• optical- and phonons-related phenomena;
• magnetic-semiconductor structures;
• charge/spin-, magnon-, skyrmion-, Cooper pair- and majorana fermion- transport and tunneling;
• ultra-fast nonlinear optical phenomena;
• novel devices and applications (such as high performance sensor, solar cell, etc);
• novel growth and fabrication techniques for nanostructures