Effect of molar concentration on optoelectronic properties of α-Fe2O3 nanoparticles for n-α-Fe2O3/p-Si junction diode application

IF 2.1 4区物理与天体物理 Q3 PHYSICS, CONDENSED MATTER

Solid State Communications Pub Date : 2025-02-12 DOI:10.1016/j.ssc.2025.115873

P. Rajapandi , G. Viruthagiri , M. Vidhya , R. Marnadu , S. Arunkumar , K.S. Mohan , Mohd Shkir , M.A. Sayed

{"title":"Effect of molar concentration on optoelectronic properties of α-Fe2O3 nanoparticles for n-α-Fe2O3/p-Si junction diode application","authors":"P. Rajapandi , G. Viruthagiri , M. Vidhya , R. Marnadu , S. Arunkumar , K.S. Mohan , Mohd Shkir , M.A. Sayed","doi":"10.1016/j.ssc.2025.115873","DOIUrl":null,"url":null,"abstract":"<div><div>In present work, we have synthesized rhombohedral structured α-Fe2O3nanoparticles (NPs) for various molar concentrations of 0.25, 0.5, 0.75, and 1 M using a simple co-precipitate method. X-ray diffraction analysis confirmed the formation of single-phase rhombohedral structured α-Fe2O3 NPs. The Raman characteristic peaks exhibited a pure hematite phase, free from iron oxide and iron hydroxide impurities. FESEM showed a randomly oriented submicron-sized and irregular granular-shaped structure of the synthesized α-Fe2O3 NPs. The fundamental stretching and bending vibrations of chemical bonds and the existence of Fe‒O functional groups were captured from FTIR spectra. UV–Vis absorption spectral analysis showed a strong optical absorption peak in the range of 350–550 nm. Moreover, A minimum optical band gap of 1.7 eV as observed for 1 M of α-Fe2O3 NPs. Based on the beat outcome, we have developed n-α-Fe2O3/p-Si junction diode for 1 M of α-Fe2O3 NPs and measured forward and reverse current values for dark and light environments. Remarkably, the diode exhibited a lower ideality factor of 3.4 under light exposure. Furthermore, the n-α-Fe2O3/p-Si diode demonstrated a quantum efficiency of 38 % and a detectivity of 1.98 × 1010 Jones, indicating its potential for future optoelectronic applications. These results strongly support the suitability of the fabricated n-α-Fe2O3/p-Si diode for advanced optoelectronic technologies.</div></div>","PeriodicalId":430,"journal":{"name":"Solid State Communications","volume":"399 ","pages":"Article 115873"},"PeriodicalIF":2.1000,"publicationDate":"2025-02-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid State Communications","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038109825000481","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}

引用次数: 0

Abstract

In present work, we have synthesized rhombohedral structured α-Fe₂O₃nanoparticles (NPs) for various molar concentrations of 0.25, 0.5, 0.75, and 1 M using a simple co-precipitate method. X-ray diffraction analysis confirmed the formation of single-phase rhombohedral structured α-Fe₂O₃ NPs. The Raman characteristic peaks exhibited a pure hematite phase, free from iron oxide and iron hydroxide impurities. FESEM showed a randomly oriented submicron-sized and irregular granular-shaped structure of the synthesized α-Fe₂O₃ NPs. The fundamental stretching and bending vibrations of chemical bonds and the existence of Fe‒O functional groups were captured from FTIR spectra. UV–Vis absorption spectral analysis showed a strong optical absorption peak in the range of 350–550 nm. Moreover, A minimum optical band gap of 1.7 eV as observed for 1 M of α-Fe₂O₃ NPs. Based on the beat outcome, we have developed n-α-Fe₂O₃/p-Si junction diode for 1 M of α-Fe₂O₃ NPs and measured forward and reverse current values for dark and light environments. Remarkably, the diode exhibited a lower ideality factor of 3.4 under light exposure. Furthermore, the n-α-Fe₂O₃/p-Si diode demonstrated a quantum efficiency of 38 % and a detectivity of 1.98 × 10¹⁰ Jones, indicating its potential for future optoelectronic applications. These results strongly support the suitability of the fabricated n-α-Fe₂O₃/p-Si diode for advanced optoelectronic technologies.

查看原文本刊更多论文

求助全文

约1分钟内获得全文求助全文

来源期刊

Solid State Communications 物理-物理：凝聚态物理

CiteScore

3.40

自引率

4.80%

发文量

287

审稿时长

51 days

期刊介绍： Solid State Communications is an international medium for the publication of short communications and original research articles on significant developments in condensed matter science, giving scientists immediate access to important, recently completed work. The journal publishes original experimental and theoretical research on the physical and chemical properties of solids and other condensed systems and also on their preparation. The submission of manuscripts reporting research on the basic physics of materials science and devices, as well as of state-of-the-art microstructures and nanostructures, is encouraged. A coherent quantitative treatment emphasizing new physics is expected rather than a simple accumulation of experimental data. Consistent with these aims, the short communications should be kept concise and short, usually not longer than six printed pages. The number of figures and tables should also be kept to a minimum. Solid State Communications now also welcomes original research articles without length restrictions. The Fast-Track section of Solid State Communications is the venue for very rapid publication of short communications on significant developments in condensed matter science. The goal is to offer the broad condensed matter community quick and immediate access to publish recently completed papers in research areas that are rapidly evolving and in which there are developments with great potential impact.