Nonvolatile electrical control of magnetism of monolayer C2N via carrier doping in a two dimensional heterostructure

Abstract

Nonvolatile electrical control of magnetism in two-dimensional (2D) van der Walls heterostructure has sparked significant interest for both understanding the fundamental magnetoelectric physics and device application. Here, using the first-principles calculations, we propose a new multiferroic van der Waals (vdW) heterostructure $C_{2}N$/${\mathrm{In}}_2{\mathrm{Se}}_3$ based on C₂N and ferroelectric (FE) In₂Se₃ relying on no-transition metals. Upon electron doping, $C_{2}N$/${\mathrm{In}}_2{\mathrm{Se}}_3$-$P\downarrow$ maintains nonmagnetic nature, but $C_{2}N$/${\mathrm{In}}_2{\mathrm{Se}}_3$-$P\uparrow$ changes into ferromagnetic state. Moreover, the magnetoelectric coupling is enhanced via engineering interlayer distance of $C_{2}N$/${\mathrm{In}}_2{\mathrm{Se}}_3$. The magnetic moment of $C_{2}N$/${\mathrm{In}}_2{\mathrm{Se}}_3$-$P\uparrow$ reaches 1.0 ${\mu }_B$/e over the electron concentration ranging from 0.1 to 0.4 e per unit cell at an interlayer distance of 3.2 Å. Our results broaden the materials design space for 2D multiferroic materials.