Bias Selectable Dual Band Detectors Based on Vertically Aligned In2S3-Coated ZnO Nanorod Arrays Grown on p-GaN

Abstract

This study presents the fabrication of ZnO nanotube arrays coated with vertically aligned In₂S₃, which were deposited onto a p-GaN substrate using a wet chemical approach. The In₂S₃/ZnO/p-GaN heterostructure-based device showed improved photoresponse and self-driven operation. The device based on ZnO/p-GaN structure coupling with In₂S₃ nanoparticles revealed bias selectable photodetection by detecting UV and UV/visible light through bias voltage modulation. This strategy can benefit the fabrication of ZnO/GaN-based broadband photodetector.