Spin-orbit control of antiferromagnetic domains without a Zeeman coupling

IF 5.4 1区 物理与天体物理 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
D. T. Maimone, J. Shen, N. Gauthier, D. G. Mazzone, M. Zolliker, R. Yadav, R. Sibille, D. J. Gawryluk, E. Pomjakushina, S. Raymond, E. Ressouche, C. Niedermayer, G. Lapertot, J. L. Gavilano, M. Bartkowiak, M. Kenzelmann
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Abstract

Encoding information in antiferromagnetic (AFM) domains is a promising solution for the ever growing demand in magnetic storage capacity. The absence of a macroscopic magnetization avoids crosstalk between different domain states, enabling ultrahigh density spintronics1 while being detrimental to the domain detection and manipulation. Disentangling these merits and disadvantages seemed so far unattainable. We report evidence for a new AFM domain selection mechanism based on non-Zeeman susceptibility anisotropy induced by the relative orientation of external magnetic fields to the k-domains. Consequently, the charge transport response is controlled by the rotation of the magnetic field and a pronounced anisotropic magnetoresistance is found in the AFM phase of bulk materials Nd1−xCex CoIn5. Our results and the domain switching theory2 indicate that this constitutes a new effect which might be universal across multiband materials. It provides a novel mechanism to control and detect AFM domains opening new perspectives for AFM sprintronics.

Abstract Image

没有塞曼耦合的反铁磁畴的自旋轨道控制
在反铁磁(AFM)畴中对信息进行编码是满足日益增长的磁存储容量需求的一种很有前途的解决方案。宏观磁化的缺失避免了不同畴态之间的串扰,实现了超高密度的自旋电子子1,但不利于畴的探测和操作。把这些优点和缺点区分开来似乎到目前为止是不可能的。我们报告了一种新的基于非塞曼磁化率各向异性的AFM畴选择机制的证据,该机制是由外部磁场对k畴的相对取向引起的。因此,电荷输运响应由磁场的旋转控制,并且在块体材料Nd1−xCex CoIn5的AFM相中发现了明显的各向异性磁电阻。我们的结果和畴切换理论表明,这构成了一种可能在多波段材料中普遍存在的新效应。它提供了一种新的机制来控制和检测AFM结构域,为AFM电子学开辟了新的前景。
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来源期刊
npj Quantum Materials
npj Quantum Materials Materials Science-Electronic, Optical and Magnetic Materials
CiteScore
10.60
自引率
3.50%
发文量
107
审稿时长
6 weeks
期刊介绍: npj Quantum Materials is an open access journal that publishes works that significantly advance the understanding of quantum materials, including their fundamental properties, fabrication and applications.
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