A First Principle Study to Understand the Importance of Edge-exposed and Basal Plane Defective MoS2 Towards Nitrogen Reduction Reaction.

IF 2.3 3区 化学 Q3 CHEMISTRY, PHYSICAL
Yuan-Hui Xiao, Xin-Wei Wu, Lai-Ke Chen, Zi-Wei Ma, Jian-De Lin, Rajkumar Devasenathipathy, De-Yin Wu, Zhong-Qun Tian
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Abstract

Nitrogen reduction reaction (NRR) as a promising approach to ammonia synthesis has received much attention in recent years. Molybdenum disulfides (MoS2), as one of the most potential candidates for NRR, are extensively investigated. However, the inert basal plane limits the application of MoS2. Herein, by using density functional theory (DFT) calculations, we constructed edge-exposed MoS2 and different kinds of basal plane defects, including anti-site, sulfur vacancy and pore defects, to systematically investigate their influence on the NRR performance. The thermodynamically calculated results revealed that the NRR on edge-exposed MoS2, anti-site defects, sulfur vacancy with three sulfur atoms missing (S3V) and porous defect (D) exhibit great catalytic activity with low limiting potentials. The calculated limiting potentials are -0.43 and -0.47 V at armchair and zigzag edge MoS2, -0.42 and -0.44 V at anti-site defects, -0.49 and -0.67 V at S3V and D. However, by inspecting the thermodynamic properties of the hydrogen evolution reaction, we proposed that the zigzag-end MoS2 and anti-site defects exhibit a better NRR selectivity compared to armchair-end MoS2, S3V and D. Electronic structure calculations reveals that the edge-exposed and basal plane defective MoS2 can improve the conductivity of the material by reducing the band gap. Donation-backdonation mechanism can effectively promote the activation of nitrogen molecule. Our results pave the way to understanding the defective effects of the MoS2 inertness plane for NRR and designing high-performance NRR catalysts.

了解边缘暴露和基面缺陷的二硫化钼对氮还原反应重要性的第一性原理研究。
氮还原反应作为一种很有前途的合成氨方法,近年来受到了广泛的关注。本文利用密度泛函理论(DFT)计算,构建了边缘暴露的MoS2和不同类型的基面缺陷,包括反位、硫空位和孔缺陷,系统地研究了它们对NRR性能的影响。热力学计算结果表明,边缘暴露的MoS2、反位缺陷、缺失3个硫原子的硫空位(S3V)和多孔缺陷(D)上的NRR具有较低的催化活性。计算得到的极限电位分别为-0.43 V和-0.47 V,反位缺陷为-0.42 V和-0.44 V, S3V和d为-0.49 V和-0.67 V。然而,通过考察析氢反应的热力学性质,我们发现与扶手椅端MoS2相比,锯齿端MoS2和反位缺陷具有更好的NRR选择性。电子结构计算表明,边缘暴露和基面缺陷的MoS2可以通过减小带隙来提高材料的导电性。捐赠-反捐赠机制能有效促进氮分子的活化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Chemphyschem
Chemphyschem 化学-物理:原子、分子和化学物理
CiteScore
4.60
自引率
3.40%
发文量
425
审稿时长
1.1 months
期刊介绍: ChemPhysChem is one of the leading chemistry/physics interdisciplinary journals (ISI Impact Factor 2018: 3.077) for physical chemistry and chemical physics. It is published on behalf of Chemistry Europe, an association of 16 European chemical societies. ChemPhysChem is an international source for important primary and critical secondary information across the whole field of physical chemistry and chemical physics. It integrates this wide and flourishing field ranging from Solid State and Soft-Matter Research, Electro- and Photochemistry, Femtochemistry and Nanotechnology, Complex Systems, Single-Molecule Research, Clusters and Colloids, Catalysis and Surface Science, Biophysics and Physical Biochemistry, Atmospheric and Environmental Chemistry, and many more topics. ChemPhysChem is peer-reviewed.
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