Molecular beam epitaxial In2Te3 electronic devices

IF 8.6 2区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

Npg Asia Materials Pub Date : 2024-11-22 DOI:10.1038/s41427-024-00578-0

Imhwan Kim, Jinseok Ryu, Eunsu Lee, Sangmin Lee, Seokje Lee, Wonwoo Suh, Jamin Lee, Miyoung Kim, Hong seok Oh, Gyu-Chul Yi

{"title":"Molecular beam epitaxial In2Te3 electronic devices","authors":"Imhwan Kim, Jinseok Ryu, Eunsu Lee, Sangmin Lee, Seokje Lee, Wonwoo Suh, Jamin Lee, Miyoung Kim, Hong seok Oh, Gyu-Chul Yi","doi":"10.1038/s41427-024-00578-0","DOIUrl":null,"url":null,"abstract":"We report on the electrical characteristics of field-effect transistors (FETs) and Schottky diodes based on In2Te3 grown on hexagonal boron nitride (h-BN) substrates utilizing molecular beam epitaxy (MBE). A two-step growth method was used to increase surface coverage and large grain sizes for high-quality In2Te3. Scanning transmission electron microscopy (STEM) imaging revealed an atomically clean and abrupt interface between the In2Te3 and h-BN substrates. Compared with the previously reported In2Te3 FETs, the MBE-grown In2Te3 FETs exhibited superior electrical properties, including a mobility of 6.07 cm2 V−1 s−1, a subthreshold swing close to 6 V dec−1, and an impressive on/off ratio of approximately 105. Furthermore, the Ti/In2Te3 Schottky diodes exhibit a low saturation current of 0.4 nA, an ideality factor of 26.7, and a Schottky barrier height of 0.68 eV. We report on the fabrication and electrical characteristics of In2Te3 thin films grown on h-BN using molecular beam epitaxy(MBE). Cross-sectional scanning transmission electron microscopy images showed an atomically clean and abrupt interface between In2Te3 and h-BN substrates. The MBE-grown In2Te3 electronic devices exhibited superior electrical properties compared to previously reported In2Te3 field effect transistors(FETs) and In2Te3-based Schottky diodes.","PeriodicalId":19382,"journal":{"name":"Npg Asia Materials","volume":"16 1","pages":"1-6"},"PeriodicalIF":8.6000,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41427-024-00578-0.pdf","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Npg Asia Materials","FirstCategoryId":"88","ListUrlMain":"https://www.nature.com/articles/s41427-024-00578-0","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

Abstract

We report on the electrical characteristics of field-effect transistors (FETs) and Schottky diodes based on In2Te3 grown on hexagonal boron nitride (h-BN) substrates utilizing molecular beam epitaxy (MBE). A two-step growth method was used to increase surface coverage and large grain sizes for high-quality In2Te3. Scanning transmission electron microscopy (STEM) imaging revealed an atomically clean and abrupt interface between the In2Te3 and h-BN substrates. Compared with the previously reported In2Te3 FETs, the MBE-grown In2Te3 FETs exhibited superior electrical properties, including a mobility of 6.07 cm2 V−1 s−1, a subthreshold swing close to 6 V dec−1, and an impressive on/off ratio of approximately 105. Furthermore, the Ti/In2Te3 Schottky diodes exhibit a low saturation current of 0.4 nA, an ideality factor of 26.7, and a Schottky barrier height of 0.68 eV. We report on the fabrication and electrical characteristics of In2Te3 thin films grown on h-BN using molecular beam epitaxy(MBE). Cross-sectional scanning transmission electron microscopy images showed an atomically clean and abrupt interface between In2Te3 and h-BN substrates. The MBE-grown In2Te3 electronic devices exhibited superior electrical properties compared to previously reported In2Te3 field effect transistors(FETs) and In2Te3-based Schottky diodes.

Abstract Image

查看原文本刊更多论文

求助全文

约1分钟内获得全文求助全文

来源期刊

Npg Asia Materials MATERIALS SCIENCE, MULTIDISCIPLINARY-

CiteScore

15.40

自引率

1.00%

发文量

审稿时长

2 months

期刊介绍： NPG Asia Materials is an open access, international journal that publishes peer-reviewed review and primary research articles in the field of materials sciences. The journal has a global outlook and reach, with a base in the Asia-Pacific region to reflect the significant and growing output of materials research from this area. The target audience for NPG Asia Materials is scientists and researchers involved in materials research, covering a wide range of disciplines including physical and chemical sciences, biotechnology, and nanotechnology. The journal particularly welcomes high-quality articles from rapidly advancing areas that bridge the gap between materials science and engineering, as well as the classical disciplines of physics, chemistry, and biology. NPG Asia Materials is abstracted/indexed in Journal Citation Reports/Science Edition Web of Knowledge, Google Scholar, Chemical Abstract Services, Scopus, Ulrichsweb (ProQuest), and Scirus.