Extrapolation of Metal Gate With High-K Spacer in Strained Nanosystem Channel QWB Cylindrical FET for High-Speed Applications

Abstract

The development of novel strain-engineered channel Cylindrical Gate-All-Around (CGAA) quantum well-barrier (QWB) field-effect transistors (FETs) using high-k gate stacks and metallic gates with varying work functions is analyzed, offering enhanced performance to meet the 1 nm technology node of IRDS 2028. The devices incorporate a QWB system incorporating strain engineering in the ultrathin channel region flanked by high-k spacers surrounding the underlaps and metal gate with a stack high-k dielectric. Key electrostatic characteristics, including the Ion/Ioff ratio, leakage current, on-current, sub-threshold swing (SS), drain-induced barrier lowering (DIBL), and transconductance, were extrapolated and analyzed for the CGAA FETs developed in this study. The tungsten metal gate device provides a significantly improved Ion/Ioff ratio with a notable 98.18% decrease in the off-current and 22.5% increase in the ON current, in contrast to existing cylindrical GAA FET. In addition, the novel strain-engineered channel CGAA QWB FET (Device C), which has a higher metal gate work function, is endorsed for near-optimal SS with augmented transconductance. The output performance (ID-V $_{\mathrm {DS}}$ ) resolves a huge enhancement in contrast to the existing GAA and IRDS 2028 1 nm technology node criteria. Hence, the device (nanowire-strained channel QWB CGAA FET) with a tungsten gate is better suited for low-power, high-speed applications with minimal short-channel effects, and is the device of future connecting numerous RF and digital applications as well as faster switching speed.