Towards dissipationless topotronics

Qing Yan , Hailong Li , Hua Jiang , X.C. Xie
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Abstract

Many aspects of topological physics offer a promising paradigm for the development of dissipationless electronic and quantum computing devices. Topological materials exhibit quantized transport and unidirectional edge states, which are inherently robust against backscattering and were thus previously assumed to be dissipationless. However, recent advancements in nanoscale thermal imaging have uncovered localized heat generation in these materials, highlighting an urgent need to reassess energy dissipation issues in topological systems. In this Perspective, we review recent progress in understanding energy dissipation in topological systems, including experimental observations enabled by pioneering thermal imaging techniques and theoretically proposed mechanisms. Central to this discussion is the recognition that energy dissipation arises from the evolution of carriers' energy distribution, independent of quantized electrical signatures. We discuss emerging criteria to identify dissipationless topological devices, providing guidance for the design of next-generation topotronics. Finally, we outline future directions, including the exploration of additional degrees of freedom, superconducting regimes, and non-Abelian operations, as well as the advancement of measurement techniques and scalable manufacturing processes, and especially emphasizing the importance of experimental verification of theoretical mechanisms.
走向无耗散地形学
拓扑物理学的许多方面为无耗散电子和量子计算设备的发展提供了一个有前途的范例。拓扑材料表现出量子化输运和单向边缘状态,它们对后向散射具有固有的鲁棒性,因此以前被认为是无耗散的。然而,纳米级热成像的最新进展揭示了这些材料中的局部热产生,这表明迫切需要重新评估拓扑系统中的能量耗散问题。在这一观点中,我们回顾了最近在理解拓扑系统能量耗散方面的进展,包括通过开创性的热成像技术实现的实验观察和理论上提出的机制。这个讨论的核心是认识到能量耗散是由载流子能量分布的演变引起的,与量子化的电特征无关。我们讨论了确定无耗散拓扑器件的新兴标准,为下一代拓扑器件的设计提供指导。最后,我们概述了未来的方向,包括探索额外的自由度、超导体制和非阿贝尔操作,以及测量技术和可扩展制造工艺的进步,并特别强调了实验验证理论机制的重要性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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