Valley-dependent electronic transport in a graphene with double magnetic-strained barriers

IF 2.9 3区物理与天体物理 Q3 NANOSCIENCE & NANOTECHNOLOGY

Physica E-low-dimensional Systems & Nanostructures Pub Date : 2025-01-06 DOI:10.1016/j.physe.2025.116176

Man-Ting Li, Yang-Lai Hou, Jian-Duo Lu, Jin-Ze Ye, Jing Huang

{"title":"Valley-dependent electronic transport in a graphene with double magnetic-strained barriers","authors":"Man-Ting Li, Yang-Lai Hou, Jian-Duo Lu, Jin-Ze Ye, Jing Huang","doi":"10.1016/j.physe.2025.116176","DOIUrl":null,"url":null,"abstract":"<div><div>Using the transfer-matrix method, we investigate the valley-dependent electronic transport in a graphene with double magnetic-strained barriers. The effects of the magnitude, position and width of the strained barriers as well as the strength of the magnetic field on the electronic conductance and the valley polarization in the parallel (P) configuration are analyzed. In order to comprehensively understand and apply this model, we also study how the strength of the magnetic field and the magnitude of the strained barriers affect the valley polarization when the ferromagnetic metal (FM) stripes are shifted from P configuration to antiparallel (AP) configuration. The results show that the magnetic field and the strains significantly influence the electronic transport properties in both P and AP configurations. Therefore, this work provides crucial help for understanding valley-dependent transport characteristics, and the studied graphene nanostructure is useful for designing the valleytronic device.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"168 ","pages":"Article 116176"},"PeriodicalIF":2.9000,"publicationDate":"2025-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica E-low-dimensional Systems & Nanostructures","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1386947725000013","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"NANOSCIENCE & NANOTECHNOLOGY","Score":null,"Total":0}

引用次数: 0

Abstract

Using the transfer-matrix method, we investigate the valley-dependent electronic transport in a graphene with double magnetic-strained barriers. The effects of the magnitude, position and width of the strained barriers as well as the strength of the magnetic field on the electronic conductance and the valley polarization in the parallel (P) configuration are analyzed. In order to comprehensively understand and apply this model, we also study how the strength of the magnetic field and the magnitude of the strained barriers affect the valley polarization when the ferromagnetic metal (FM) stripes are shifted from P configuration to antiparallel (AP) configuration. The results show that the magnetic field and the strains significantly influence the electronic transport properties in both P and AP configurations. Therefore, this work provides crucial help for understanding valley-dependent transport characteristics, and the studied graphene nanostructure is useful for designing the valleytronic device.

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来源期刊

Physica E-low-dimensional Systems & Nanostructures 物理-纳米科技

CiteScore

7.30

自引率

6.10%

发文量

356

审稿时长

65 days

期刊介绍： Physica E: Low-dimensional systems and nanostructures contains papers and invited review articles on the fundamental and applied aspects of physics in low-dimensional electron systems, in semiconductor heterostructures, oxide interfaces, quantum wells and superlattices, quantum wires and dots, novel quantum states of matter such as topological insulators, and Weyl semimetals. Both theoretical and experimental contributions are invited. Topics suitable for publication in this journal include spin related phenomena, optical and transport properties, many-body effects, integer and fractional quantum Hall effects, quantum spin Hall effect, single electron effects and devices, Majorana fermions, and other novel phenomena. Keywords: • topological insulators/superconductors, majorana fermions, Wyel semimetals; • quantum and neuromorphic computing/quantum information physics and devices based on low dimensional systems; • layered superconductivity, low dimensional systems with superconducting proximity effect; • 2D materials such as transition metal dichalcogenides; • oxide heterostructures including ZnO, SrTiO3 etc; • carbon nanostructures (graphene, carbon nanotubes, diamond NV center, etc.) • quantum wells and superlattices; • quantum Hall effect, quantum spin Hall effect, quantum anomalous Hall effect; • optical- and phonons-related phenomena; • magnetic-semiconductor structures; • charge/spin-, magnon-, skyrmion-, Cooper pair- and majorana fermion- transport and tunneling; • ultra-fast nonlinear optical phenomena; • novel devices and applications (such as high performance sensor, solar cell, etc); • novel growth and fabrication techniques for nanostructures