Effect of phosphorus and gallium on oxidation resistance of Sn-0.7Cu brazing metal: First-principle calculation and experimental verification

IF 6.2 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Lingyue Wang , He Wei , Chen Liu , Shiyu Yang , Zulai Li , Min Zha
{"title":"Effect of phosphorus and gallium on oxidation resistance of Sn-0.7Cu brazing metal: First-principle calculation and experimental verification","authors":"Lingyue Wang ,&nbsp;He Wei ,&nbsp;Chen Liu ,&nbsp;Shiyu Yang ,&nbsp;Zulai Li ,&nbsp;Min Zha","doi":"10.1016/j.jmrt.2025.01.021","DOIUrl":null,"url":null,"abstract":"<div><div>In this paper, the mechanism of the effect of phosphorus and gallium on the oxidation resistance of Sn-0.7Cu brazing alloy was studied based on the calculation of first principles. The calculation shows that the control principle of the anti-oxidation of phosphorus and gallium is that a passivation film is formed on the surface of the substrate, which prevents the subsequent reaction of oxygen in the air with the substrate. Although phosphorus has been shown to be more electronegative, the antioxidant effect of gallium is stronger than that of phosphorus at medium and low oxygen concentrations, because gallium has a lower free energy and is more easily enriched near the passivation film from a kinetic point of view, and its ability to form an oxide layer is stronger than that of phosphorus. The enrichment of doping elements near the passivated film and the antioxidant effect were confirmed by experiments.</div></div>","PeriodicalId":54332,"journal":{"name":"Journal of Materials Research and Technology-Jmr&t","volume":"35 ","pages":"Pages 660-674"},"PeriodicalIF":6.2000,"publicationDate":"2025-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Research and Technology-Jmr&t","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2238785425000213","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

In this paper, the mechanism of the effect of phosphorus and gallium on the oxidation resistance of Sn-0.7Cu brazing alloy was studied based on the calculation of first principles. The calculation shows that the control principle of the anti-oxidation of phosphorus and gallium is that a passivation film is formed on the surface of the substrate, which prevents the subsequent reaction of oxygen in the air with the substrate. Although phosphorus has been shown to be more electronegative, the antioxidant effect of gallium is stronger than that of phosphorus at medium and low oxygen concentrations, because gallium has a lower free energy and is more easily enriched near the passivation film from a kinetic point of view, and its ability to form an oxide layer is stronger than that of phosphorus. The enrichment of doping elements near the passivated film and the antioxidant effect were confirmed by experiments.
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来源期刊
Journal of Materials Research and Technology-Jmr&t
Journal of Materials Research and Technology-Jmr&t Materials Science-Metals and Alloys
CiteScore
8.80
自引率
9.40%
发文量
1877
审稿时长
35 days
期刊介绍: The Journal of Materials Research and Technology is a publication of ABM - Brazilian Metallurgical, Materials and Mining Association - and publishes four issues per year also with a free version online (www.jmrt.com.br). The journal provides an international medium for the publication of theoretical and experimental studies related to Metallurgy, Materials and Minerals research and technology. Appropriate submissions to the Journal of Materials Research and Technology should include scientific and/or engineering factors which affect processes and products in the Metallurgy, Materials and Mining areas.
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