Microstructure evolution and hardening behavior in FCC Ni under ion irradiation: Influence of dose rate

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Scripta Materialia Pub Date : 2025-01-15 DOI:10.1016/j.scriptamat.2025.116546

Liang Xia , Jia Huang , Yiheng Chen , Yuxin Liu , Ke Jin , Xujia Wang , Shuan Xia , Hongchang Wang , Ling Li , Jianming Xue , Yugang Wang , Chenxu Wang

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引用次数: 0

Abstract

The dose rate-dependent microstructure evolution and hardening of FCC-Ni was investigated. Irradiations were conducted using 6 MeV I³⁺ ions at a temperature of 723 K, across four distinct dose rates. TEM analyses revealed that with increasing dose rate, the size of dislocation loops decreased while their density increased. In contrast, both the size and density of voids exhibited a declining trend. The defect dynamics were considered to elucidate the underlying mechanisms of these findings. Nano-indentation test was utilized to evaluate the depth-dependent hardness, revealing a pronounced irradiation hardening effect that diminished as the dose rate increased. A mechanistic model was developed, incorporating the hardening contributions of irradiation-induced voids and loops, along with the role of dislocation networks. The model provided an analysis of microstructure parameters and strengthening coefficients with respect to dose rate, identifying the dominant hardening mechanisms at various depths and highlighting their evolution with dose rate.

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来源期刊

Scripta Materialia 工程技术-材料科学：综合

CiteScore

11.40

自引率

5.00%

发文量

581

审稿时长

34 days

期刊介绍： Scripta Materialia is a LETTERS journal of Acta Materialia, providing a forum for the rapid publication of short communications on the relationship between the structure and the properties of inorganic materials. The emphasis is on originality rather than incremental research. Short reports on the development of materials with novel or substantially improved properties are also welcomed. Emphasis is on either the functional or mechanical behavior of metals, ceramics and semiconductors at all length scales.