Highly Efficient InOOH/ZnIn2S4 Hollow Sphere S-Scheme Heterojunction with 0D/2D Interface for Enhancing Photocatalytic CO2 Conversion

IF 10.8 2区化学 Q1 CHEMISTRY, PHYSICAL

物理化学学报 Pub Date : 2024-11-01 DOI:10.3866/PKU.WHXB202407002

Jiaxing Cai , Wendi Xu , Haoqiang Chi , Qian Liu , Wa Gao , Li Shi , Jingxiang Low , Zhigang Zou , Yong Zhou

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Abstract

S-scheme heterojunction system represents a highly efficient strategy for photocatalytic applications as it can simultaneously facilitate photogenerated charge carrier separation and enhance the reduction-oxidation potentials of the photocatalyst. Despite its gigantic potential, the photocatalytic CO₂ conversion efficiency of the S-scheme heterojunction remains limited mainly attributed to the sluggish interfacial charge carrier migration and poor light utilization efficiency. Herein, we prepare an InOOH/ZnIn₂S₄ hollow sphere S-scheme heterojunction with 0D/2D contact interface for enhancing photocatalytic CO₂ conversion performance. Specifically, the hollow sphere morphology can cause the multireflection of incident light within the photocatalyst leading to enhanced light absorption of the photocatalyst. In addition, the 0D/2D contact interface can facilitate the photogenerated charge carrier migration transfer over the InOOH/ZnIn₂S₄ S-scheme heterojunction. Furthermore, combining in situ irradiated X-ray photoelectron spectroscopy (ISIXPS) characterization and radicals trapping test, it is affirmed the accumulation of photogenerated holes and electrons respectively on InOOH and ZnIn₂S₄, which is beneficial for the effective utilization of photogenerated charge carriers. As a result, the photocatalytic CO₂ conversion performance of the optimized InOOH/ZnIn₂S₄ is ca. 25.8 times higher than that of pristine ZnIn₂S₄. Our reported results demonstrate a facile yet effective strategy for enhancing the interfacial photogenerated charge carrier migration and light utilization efficiency of S-scheme heterojunction.

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