Oxidation behavior of Pt–Ru bimetallic thin films as gate electrodes by atomic layer deposition

IF 0.8 4区物理与天体物理 Q3 PHYSICS, MULTIDISCIPLINARY

Journal of the Korean Physical Society Pub Date : 2024-12-23 DOI:10.1007/s40042-024-01245-x

Young-Wan Kim, Hyun-Jae Woo, Hyunju Lee, Se-Hun Kwon, Woo-Jae Lee

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Abstract

Investigating the oxidation behavior of a bimetallic thin film for a durable gate electrode in complementary metal–oxide semiconductor (CMOS) devices is challenging. Herein, Pt–Ru bimetallic thin films were synthesized using atomic layer deposition (ALD), followed by intentional oxidation at 600 °C. The as-deposited Pt–Ru thin films presented distorted lattices due to the solid solution, whereas the X-ray diffraction (XRD) peaks of the oxidized Pt–Ru thin films did not shift, except for the Pt-rich oxidized Pt–Ru thin films. Interestingly, due to the high resistance of Pt to oxidation, Ru atoms in the Pt-rich oxidized Pt–Ru thin films were not oxidized under an oxidation atmosphere. Upon increasing the Ru content, Ru atoms started to oxidize, followed by full oxidization into Ru oxide in the Ru-rich Pt–Ru thin films. Simultaneously, Ru atoms moved to the surface and were oxidized with surface oxygen, thereby separating the upper Ru oxide and Pt metal layer. The resistivity of the oxidized Pt–Ru thin films increased as the Ru content increased, whereas the as-deposited Pt–Ru thin films exhibited a volcano-shaped peak depending on the relative composition between Ru and Pt. The work functions of the oxidized Pt–Ru thin films were higher than those of the as-deposited films, due to the higher work function of RuO₂ than those of Ru metals; however, the Pt-dominant Pt–Ru thin films showed similar values both before and after oxidation, owing to the unoxidized Ru atoms.

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原子层沉积Pt-Ru双金属薄膜作为栅电极的氧化行为

研究互补金属氧化物半导体（CMOS）器件中用于耐用栅极的双金属薄膜的氧化行为是一项具有挑战性的工作。本文采用原子层沉积法（ALD）合成了Pt-Ru双金属薄膜，然后在600℃下有意氧化。由于固溶体的作用，沉积的Pt-Ru薄膜呈现出扭曲的晶格，而除了富pt氧化Pt-Ru薄膜外，氧化Pt-Ru薄膜的x射线衍射（XRD）峰没有移位。有趣的是，由于Pt的高抗氧化性，富Pt氧化Pt- Ru薄膜中的Ru原子在氧化气氛下不会被氧化。随着Ru含量的增加，Ru原子开始氧化，然后在富Ru Pt-Ru薄膜中完全氧化为Ru氧化物。同时，Ru原子移动到表面并被表面氧氧化，从而分离了上部氧化Ru和Pt金属层。氧化后的Pt - Ru薄膜的电阻率随Ru含量的增加而增加，而沉积态Pt - Ru薄膜的电阻率随Ru和Pt的相对组成的不同而呈现火山状峰值。氧化态Pt - Ru薄膜的功函数高于沉积态薄膜，这是由于RuO2的功函数高于Ru金属的功函数；然而，由于未氧化的Ru原子，以pt为主的Pt-Ru薄膜在氧化前后表现出相似的值。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of the Korean Physical Society PHYSICS, MULTIDISCIPLINARY-

CiteScore

1.20

自引率

16.70%

发文量

276

审稿时长

5.5 months

期刊介绍： The Journal of the Korean Physical Society (JKPS) covers all fields of physics spanning from statistical physics and condensed matter physics to particle physics. The manuscript to be published in JKPS is required to hold the originality, significance, and recent completeness. The journal is composed of Full paper, Letters, and Brief sections. In addition, featured articles with outstanding results are selected by the Editorial board and introduced in the online version. For emphasis on aspect of international journal, several world-distinguished researchers join the Editorial board. High quality of papers may be express-published when it is recommended or requested.