Progress and perspective of perovskite thin single crystal photodetectors

IF 10.8 2区 化学 Q1 CHEMISTRY, PHYSICAL
Yao Ma, Xin Zhao, Hongxu Chen, Wei Wei, Liang Shen
{"title":"Progress and perspective of perovskite thin single crystal photodetectors","authors":"Yao Ma,&nbsp;Xin Zhao,&nbsp;Hongxu Chen,&nbsp;Wei Wei,&nbsp;Liang Shen","doi":"10.3866/PKU.WHXB202309045","DOIUrl":null,"url":null,"abstract":"<div><div>Metal halide perovskites show immense promise in photodetection applications, having been employed in the research of photodiodes, photoconductors, and phototransistors. However, the majority of current photodetectors utilizing perovskite materials rely on polycrystalline thin films, and the presence of grain boundaries and defects hinders their photoelectric performance, creating a bottleneck in further advancements. To address this issue, researchers have employed techniques such as inverse temperature crystallization (ITC) and anti-solvent vapor-assisted crystallization (AVC) to synthesize various perovskite single crystals. Bulk single crystal perovskite structures are advantageous due to their lack of grain boundaries, resulting in lower dark current and noise in photodetectors, thereby enhancing their weak light detection capabilities. Additionally, the diminished presence of grain boundaries extends the lifetime of photo-generated carriers, providing a foundation for improved detector performance. However, due to the excellent optical absorption coefficient of perovskites, the excessive thickness of bulk single crystals can only increase the probability of carrier recombination, impacting the photodetector's performance. Consequently, perovskite thin single crystal materials prepared by controlling longitudinal size have garnered significant interest in novel detector research. Various techniques, such as space-confined method, surface tension-assisted method, and vapor phase epitaxy, have been proposed to growth thin single crystals with controllable thickness. These methods have been continually optimized to enhance crystal quality. Thin single crystal perovskites not only enhance photodetector performance but also hold potential for large-area single crystal production, supporting the development of photodetector imaging arrays. This paper outlines the fundamental principles behind perovskite single crystal growth, introduces various technological approaches developed for thin perovskite single crystal growth, and analyzes the resulting materials from different growth methods. It further reviews notable studies in the realm of perovskite thin single crystal photodetectors for different device types. Finally, the paper discusses current challenges and issues in this field while offering insights into potential future directions of development.</div></div>","PeriodicalId":6964,"journal":{"name":"物理化学学报","volume":"41 4","pages":"Article 100030"},"PeriodicalIF":10.8000,"publicationDate":"2024-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"物理化学学报","FirstCategoryId":"92","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1000681824000304","RegionNum":2,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0

Abstract

Metal halide perovskites show immense promise in photodetection applications, having been employed in the research of photodiodes, photoconductors, and phototransistors. However, the majority of current photodetectors utilizing perovskite materials rely on polycrystalline thin films, and the presence of grain boundaries and defects hinders their photoelectric performance, creating a bottleneck in further advancements. To address this issue, researchers have employed techniques such as inverse temperature crystallization (ITC) and anti-solvent vapor-assisted crystallization (AVC) to synthesize various perovskite single crystals. Bulk single crystal perovskite structures are advantageous due to their lack of grain boundaries, resulting in lower dark current and noise in photodetectors, thereby enhancing their weak light detection capabilities. Additionally, the diminished presence of grain boundaries extends the lifetime of photo-generated carriers, providing a foundation for improved detector performance. However, due to the excellent optical absorption coefficient of perovskites, the excessive thickness of bulk single crystals can only increase the probability of carrier recombination, impacting the photodetector's performance. Consequently, perovskite thin single crystal materials prepared by controlling longitudinal size have garnered significant interest in novel detector research. Various techniques, such as space-confined method, surface tension-assisted method, and vapor phase epitaxy, have been proposed to growth thin single crystals with controllable thickness. These methods have been continually optimized to enhance crystal quality. Thin single crystal perovskites not only enhance photodetector performance but also hold potential for large-area single crystal production, supporting the development of photodetector imaging arrays. This paper outlines the fundamental principles behind perovskite single crystal growth, introduces various technological approaches developed for thin perovskite single crystal growth, and analyzes the resulting materials from different growth methods. It further reviews notable studies in the realm of perovskite thin single crystal photodetectors for different device types. Finally, the paper discusses current challenges and issues in this field while offering insights into potential future directions of development.

Abstract Image

求助全文
约1分钟内获得全文 求助全文
来源期刊
物理化学学报
物理化学学报 化学-物理化学
CiteScore
16.60
自引率
5.50%
发文量
9754
审稿时长
1.2 months
期刊介绍:
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信