Determination of the London penetration depth with the tunnel diode oscillator technique

IF 3.7 2区 物理与天体物理 Q1 Physics and Astronomy
G. P. Mikitik
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引用次数: 0

Abstract

Using a distribution of the Meissner currents over the surface of an infinitely long superconducting slab with a rectangular cross section, the magnetic moment of the slab is calculated, taking into account corrections associated with a small but finite value of the London penetration depth λ. Since these corrections determine the shift of the resonant frequency in the tunnel-diode oscillator technique, formulas for determining λ within this technique are derived for the slab. These formulas are valid for any aspect ratio of its cross section, and they differ from those that are often used in analyzing experimental data. Specifically, it is shown that the sharp edges of the slab can cause a large frequency shift proportional to the change in the value of λ2/3. Although this result complicates the extraction of a temperature dependence of λ from the frequency shift, it also opens up additional possibilities for determining the London penetration depth. In particular, under certain conditions, it is possible not only to measure the changes in λ with temperature, but also to estimate its absolute value. Published by the American Physical Society 2025
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来源期刊
Physical Review B
Physical Review B 物理-物理:凝聚态物理
CiteScore
6.70
自引率
32.40%
发文量
0
审稿时长
3.0 months
期刊介绍: Physical Review B (PRB) is the world’s largest dedicated physics journal, publishing approximately 100 new, high-quality papers each week. The most highly cited journal in condensed matter physics, PRB provides outstanding depth and breadth of coverage, combined with unrivaled context and background for ongoing research by scientists worldwide. PRB covers the full range of condensed matter, materials physics, and related subfields, including: -Structure and phase transitions -Ferroelectrics and multiferroics -Disordered systems and alloys -Magnetism -Superconductivity -Electronic structure, photonics, and metamaterials -Semiconductors and mesoscopic systems -Surfaces, nanoscience, and two-dimensional materials -Topological states of matter
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