Tannic Acid Modulates Voltage-gated K + Channels to Promote Neuritogenesis in Neuronal N2A Cells.

Journal of physiological investigation Pub Date : 2025-03-01 Epub Date: 2025-01-24 DOI:10.4103/ejpi.EJPI-D-24-00098
Tien-Yao Tsai, Chin-Min Chuang, King-Chuen Wu, Zih-He Yang, Yuk-Man Leung
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Abstract

Abstract: In a previous report, we showed that voltage-gated K + (Kv) Kv1 and Kv2 channels are involved in cAMP-induced neuritogenesis of mouse neuronal N2A cells. In this report, we examined the effects of tannic acid (TA) on Kv channels and neuritogenesis in N2A cells. TA (15 μM) mildly enhanced Kv currents at -30 to -20 mV but strongly inhibited Kv currents at higher voltages, causing a preferential activation of currents at low voltages. When enhancement and suppression of Kv currents (at -20 and +70 mV, respectively) by different concentrations of TA were analyzed, TA at 4 μM produced strong enhancement at -20 mV with relatively mild suppression at + 70 mV. TA (4 μM) also promoted neuritogenesis; such promotion was suppressed by a Kv channel blocker tetraethylammonium ion, or a combination of hongotoxin-1 (blocker of Kv1.1), UK 78282 (blocker of Kv1.4) and guangxitoxin 1E (blocker of Kv2.1). Our results demonstrate, for the first time, TA at low concentrations could modulate Kv channels and thereby promote neuritogenesis.

单宁酸调节电压门控K+通道促进神经元N2A细胞的神经发生。
在之前的研究中,我们发现电压门控的K+ (Kv) Kv1和Kv2通道参与了camp诱导的小鼠神经元N2A细胞的神经发生。在本报告中,我们研究了单宁酸(TA)对N2A细胞Kv通道和神经生成的影响。TA (15 μM)对-30 ~ -20 mV电压下的Kv电流有微弱的增强作用,但对较高电压下的Kv电流有较强的抑制作用,对低电压下的电流有优先激活作用。分析了不同浓度TA对-20和+70 mV Kv电流的增强和抑制作用,结果表明:4 μM TA对-20 mV的增强作用较强,对+70 mV的抑制作用相对较弱。TA (4 μM)对神经新生有促进作用;Kv通道阻滞剂四乙基胺离子或红毒素-1 (Kv1.1阻滞剂)、uk78282 (Kv1.4阻滞剂)和广西毒素1E (Kv2.1阻滞剂)的组合抑制了这种促进。我们的研究结果首次证明,低浓度的TA可以调节Kv通道,从而促进神经细胞的发生。
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