Enhancing Valley Splitting and Anomalous Valley Hall Effect in V-Doped Janus MoSeTe monolayer

Abstract

Exploring valleytronics in two-dimensional materials is of great significance for the development of advanced information devices. In this study, we investigate the valley polarization and electronic properties of V-doped 2H-phase Janus MoSeTe by using first-principles calculations. Our results reveal a remarkable valley spin splitting up to 60 meV, driven by the breaking of time-reversal symmetry due to the magnetic effect of the V 3d orbitals. Additionally, we observe the anomalous valley Hall effect (AVHE) in V-doped 2-H phase Janus MoSeTe monolayer, showcasing its potential for valleytronic applications. Importantly, we found that the valley polarization can be effectively modulated by applying external strain, with notable changes at different strain levels. These findings suggest that monolayer V-doped 2H-phase Janus MoSeTe is an ideal material to design of tunable, controllable valleytronic devices, offering new opportunities for the next generation of vally-based technologies.