Atomic Layer Deposition of Platinum on the Oxygen-Pretreated Graphene Surface

IF 3.2 3区 化学 Q2 CHEMISTRY, PHYSICAL
Lan-Anh T. Le, Huong T. T. Ta, Hao Van Bui, Ngoc Linh Nguyen
{"title":"Atomic Layer Deposition of Platinum on the Oxygen-Pretreated Graphene Surface","authors":"Lan-Anh T. Le, Huong T. T. Ta, Hao Van Bui, Ngoc Linh Nguyen","doi":"10.1021/acs.jpcc.4c06422","DOIUrl":null,"url":null,"abstract":"The deposition of Pt nanoparticles on graphene surfaces using atomic layer deposition (ALD) has recently emerged as a promising approach to synthesize high-performance Pt catalysts. Understanding the atomistic mechanisms of this process is crucial for improving the material quality. In this work, we employed first-principles simulation methods based on density functional theory, combined with ab initio thermodynamics and advanced sampling techniques, to investigate the graphene surface structures that may be involved in Pt ALD experiments. We examined the different reaction mechanisms occurring in the first half of the ALD cycle on the most stable surface structure, starting from the physisorption of MeCpPtMe<sub>3</sub> molecules on the graphene surface. Our results reveal that a divacancy defect combined with a single oxygen atom is the lowest free-energy structure, making it highly likely to form under oxygen pretreatment conditions. Notably, we identified the peculiar role of the divacancy in this defect site, which significantly enhances the reaction rates during the dissociation of the MeCpPtMe<sub>3</sub> ligands.","PeriodicalId":61,"journal":{"name":"The Journal of Physical Chemistry C","volume":"25 1","pages":""},"PeriodicalIF":3.2000,"publicationDate":"2024-12-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Journal of Physical Chemistry C","FirstCategoryId":"1","ListUrlMain":"https://doi.org/10.1021/acs.jpcc.4c06422","RegionNum":3,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0

Abstract

The deposition of Pt nanoparticles on graphene surfaces using atomic layer deposition (ALD) has recently emerged as a promising approach to synthesize high-performance Pt catalysts. Understanding the atomistic mechanisms of this process is crucial for improving the material quality. In this work, we employed first-principles simulation methods based on density functional theory, combined with ab initio thermodynamics and advanced sampling techniques, to investigate the graphene surface structures that may be involved in Pt ALD experiments. We examined the different reaction mechanisms occurring in the first half of the ALD cycle on the most stable surface structure, starting from the physisorption of MeCpPtMe3 molecules on the graphene surface. Our results reveal that a divacancy defect combined with a single oxygen atom is the lowest free-energy structure, making it highly likely to form under oxygen pretreatment conditions. Notably, we identified the peculiar role of the divacancy in this defect site, which significantly enhances the reaction rates during the dissociation of the MeCpPtMe3 ligands.

Abstract Image

氧预处理石墨烯表面铂的原子层沉积
利用原子层沉积(ALD)技术在石墨烯表面沉积Pt纳米粒子是一种很有前途的合成高性能Pt催化剂的方法。了解这一过程的原子机制对提高材料质量至关重要。在这项工作中,我们采用基于密度泛函理论的第一性原理模拟方法,结合从头算热力学和先进的采样技术,研究了可能涉及Pt ALD实验的石墨烯表面结构。我们从MeCpPtMe3分子在石墨烯表面的物理吸附开始,研究了ALD循环前半部分在最稳定的表面结构上发生的不同反应机制。我们的研究结果表明,与单个氧原子结合的空位缺陷是最低的自由能结构,使其在氧预处理条件下极易形成。值得注意的是,我们发现了这个缺陷位点的间隙的特殊作用,它显著提高了MeCpPtMe3配体解离的反应速率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
The Journal of Physical Chemistry C
The Journal of Physical Chemistry C 化学-材料科学:综合
CiteScore
6.50
自引率
8.10%
发文量
2047
审稿时长
1.8 months
期刊介绍: The Journal of Physical Chemistry A/B/C is devoted to reporting new and original experimental and theoretical basic research of interest to physical chemists, biophysical chemists, and chemical physicists.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信