Er:LiNbO3 Quantum Memory Platform Optimized with Dynamic Defect Annealing (Advanced Optical Materials 36/2024)

Abstract

Optimized Er-Doped LiNbO₃ Quantum Memory Platform

In the study by Andrej Kuznetsov, Kiwon Moon, and co-workers (see article number 2401374), an optimized approach for fabricating an efficient solid-state photonic quantum memory platform is proposed. This approach relies on dynamic defect annealing occurring in the LiNbO₃ matrix material during its implantation with Er ions at elevated temperatures. The resulting platform, with minimized crystalline disorder and enhanced optical activity, is promising for realizing robust quantum memory with extended storage times and high efficiencies.