A Normalizing Flow Based Validity-Preserving Inverse-Design Model for Nanoscale MOSFETs

IF 2.9 4区 工程技术 Q1 MULTIDISCIPLINARY SCIENCES
Aasim Ashai, Oves Badami, Biplab Sarkar
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引用次数: 0

Abstract

A two-stage inverse model for the design of gate-all-around nanowire metal oxide semiconductor field effect transistors (MOSFETs) is proposed in this article. The proposed model first validates the selection of output characteristics using a normalizing flow based generative model, and then predicts the device parameters corresponding to the valid output characteristics using a cascade of inverse and forward artificial neural networks (ANNs). This accurately captures any out-of-distribution datapoint in the output characteristics distribution and computes the device parameters through the inverse ANN, avoiding any conflicts created by non-unique mappings. The two-stage model instantly predicts possible device designs for a target output characteristic set without going for multiple iterations to arrive at a device-design, highlighting the accuracy and robustness of the model.

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来源期刊
Advanced Theory and Simulations
Advanced Theory and Simulations Multidisciplinary-Multidisciplinary
CiteScore
5.50
自引率
3.00%
发文量
221
期刊介绍: Advanced Theory and Simulations is an interdisciplinary, international, English-language journal that publishes high-quality scientific results focusing on the development and application of theoretical methods, modeling and simulation approaches in all natural science and medicine areas, including: materials, chemistry, condensed matter physics engineering, energy life science, biology, medicine atmospheric/environmental science, climate science planetary science, astronomy, cosmology method development, numerical methods, statistics
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