Interface-Based FeSiCr/MXene Heterostructure for High-Performance Electromagnetic Wave Absorption

IF 3.3 3区化学 Q2 CHEMISTRY, PHYSICAL

The Journal of Physical Chemistry C Pub Date : 2024-12-09 DOI:10.1021/acs.jpcc.4c0637410.1021/acs.jpcc.4c06374

Zhengxing Li, Lei Wang*, Juan Liu*, Wenmiao Zhang, Shuqi Shen, Weiwei Dong, Yuzhi Wang and Tongxiang Liang*,

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Abstract

An electrostatic self-assembly method is used to synthesize FeSiCr/MXene, and the effect of MXene on the wave-absorbing properties is studied in this paper. The electromagnetic parameters of the composites are adjusted by optimizing the amount of MXene to improve the dielectric polarization and achieving impedance matching in order to enhance the microwave-absorbing properties. The lowest reflection loss (RL_min) of FeSiCr/MXene composites is −50.34 dB at 13.75 GHz. When the quantity of MXene composite is 15 wt % and the matching thickness is only 1.32 mm, the effective absorption bandwidth (EAB) at 2.00 mm approaches 11.05 GHz. The improved FeSiCr impedance matching, together with synergistic effects such as dielectric loss and interfacial polarization, results in outstanding microwave absorption performance for the FeSiCr/MXene composites. This paper proposes a new approach to developing and synthesizing materials with lightweight and efficient electromagnetic wave absorption.

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基于界面的FeSiCr/MXene异质结构高性能电磁波吸收

采用静电自组装法合成了FeSiCr/MXene，研究了MXene对FeSiCr/MXene吸波性能的影响。通过优化MXene的用量来调节复合材料的电磁参数，改善材料的介电极化，实现阻抗匹配，从而提高材料的吸波性能。在13.75 GHz时，FeSiCr/MXene复合材料的最低反射损耗（RLmin）为- 50.34 dB。当MXene复合材料用量为15 wt %，匹配厚度仅为1.32 mm时，2.00 mm处的有效吸收带宽（EAB）接近11.05 GHz。FeSiCr/MXene复合材料的阻抗匹配性能得到了改善，介质损耗和界面极化等协同效应使得FeSiCr/MXene复合材料具有优异的微波吸收性能。本文提出了一种开发和合成轻量化、高效电磁波吸收材料的新途径。

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来源期刊

The Journal of Physical Chemistry C 化学-材料科学：综合

CiteScore

6.50

自引率

8.10%

发文量

2047

审稿时长

1.8 months

期刊介绍： The Journal of Physical Chemistry A/B/C is devoted to reporting new and original experimental and theoretical basic research of interest to physical chemists, biophysical chemists, and chemical physicists.