Improved Model for Accurate Prediction of Crosstalk-Induced Gate-Source Voltage Peaks of SiC MOSFET with SiC Schottky Diode in a Half-bridge Configuration

IF 4.6 2区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of Emerging and Selected Topics in Power Electronics Pub Date : 2024-12-16 DOI:10.1109/jestpe.2024.3518570

Manish Mandal, Shamibrota K. Roy, Kaushik Basu

引用次数: 0

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用于准确预测半桥配置中带有碳化硅肖特基二极管的碳化硅 MOSFET 的串联诱导栅源电压峰值的改进模型

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来源期刊

IEEE Journal of Emerging and Selected Topics in Power Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-

CiteScore

12.50

自引率

9.10%

发文量

547

审稿时长

3 months

期刊介绍： The aim of the journal is to enable the power electronics community to address the emerging and selected topics in power electronics in an agile fashion. It is a forum where multidisciplinary and discriminating technologies and applications are discussed by and for both practitioners and researchers on timely topics in power electronics from components to systems.