Mapping domain structures near a grain boundary in a lead zirconate titanate ferroelectric film using X-ray nanodiffraction.

IF 6.1 3区 材料科学 Q1 Biochemistry, Genetics and Molecular Biology
Journal of Applied Crystallography Pub Date : 2024-10-29 eCollection Date: 2024-12-01 DOI:10.1107/S1600576724009026
Stanislav Udovenko, Yeongwoo Son, Pannawit Tipsawat, Reilly J Knox, Stephan O Hruszkewycz, Hanfei Yan, Xiaojing Huang, Ajith Pattammattel, Marc Zajac, Wonsuk Cha, Darren C Pagan, Susan Trolier-McKinstry
{"title":"Mapping domain structures near a grain boundary in a lead zirconate titanate ferroelectric film using X-ray nanodiffraction.","authors":"Stanislav Udovenko, Yeongwoo Son, Pannawit Tipsawat, Reilly J Knox, Stephan O Hruszkewycz, Hanfei Yan, Xiaojing Huang, Ajith Pattammattel, Marc Zajac, Wonsuk Cha, Darren C Pagan, Susan Trolier-McKinstry","doi":"10.1107/S1600576724009026","DOIUrl":null,"url":null,"abstract":"<p><p>The effect of an electric field on local domain structure near a 24° tilt grain boundary in a 200 nm-thick Pb(Zr<sub>0.2</sub>Ti<sub>0.8</sub>)O<sub>3</sub> bi-crystal ferroelectric film was probed using synchrotron nanodiffraction. The bi-crystal film was grown epitaxially on SrRuO<sub>3</sub>-coated (001) SrTiO<sub>3</sub> 24° tilt bi-crystal substrates. From the nanodiffraction data, real-space maps of the ferroelectric domain structure around the grain boundary prior to and during application of a 200 kV cm<sup>-1</sup> electric field were reconstructed. In the vicinity of the tilt grain boundary, the distributions of densities of <i>c</i>-type tetragonal domains with the <i>c</i> axis aligned with the film normal were calculated on the basis of diffracted intensity ratios of <i>c</i>- and <i>a</i>-type domains and reference powder diffraction data. Diffracted intensity was averaged along the grain boundary, and it was shown that the density of <i>c</i>-type tetragonal domains dropped to ∼50% of that of the bulk of the film over a range ±150 nm from the grain boundary. This work complements previous results acquired by band excitation piezoresponse force microscopy, suggesting that reduced nonlinear piezoelectric response around grain boundaries may be related to the change in domain structure, as well as to the possibility of increased pinning of domain wall motion. The implications of the results and analysis in terms of understanding the role of grain boundaries in affecting the nonlinear piezoelectric and dielectric responses of ferroelectric materials are discussed.</p>","PeriodicalId":14950,"journal":{"name":"Journal of Applied Crystallography","volume":"57 Pt 6","pages":"1789-1799"},"PeriodicalIF":6.1000,"publicationDate":"2024-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11611287/pdf/","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Applied Crystallography","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1107/S1600576724009026","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2024/12/1 0:00:00","PubModel":"eCollection","JCR":"Q1","JCRName":"Biochemistry, Genetics and Molecular Biology","Score":null,"Total":0}
引用次数: 0

Abstract

The effect of an electric field on local domain structure near a 24° tilt grain boundary in a 200 nm-thick Pb(Zr0.2Ti0.8)O3 bi-crystal ferroelectric film was probed using synchrotron nanodiffraction. The bi-crystal film was grown epitaxially on SrRuO3-coated (001) SrTiO3 24° tilt bi-crystal substrates. From the nanodiffraction data, real-space maps of the ferroelectric domain structure around the grain boundary prior to and during application of a 200 kV cm-1 electric field were reconstructed. In the vicinity of the tilt grain boundary, the distributions of densities of c-type tetragonal domains with the c axis aligned with the film normal were calculated on the basis of diffracted intensity ratios of c- and a-type domains and reference powder diffraction data. Diffracted intensity was averaged along the grain boundary, and it was shown that the density of c-type tetragonal domains dropped to ∼50% of that of the bulk of the film over a range ±150 nm from the grain boundary. This work complements previous results acquired by band excitation piezoresponse force microscopy, suggesting that reduced nonlinear piezoelectric response around grain boundaries may be related to the change in domain structure, as well as to the possibility of increased pinning of domain wall motion. The implications of the results and analysis in terms of understanding the role of grain boundaries in affecting the nonlinear piezoelectric and dielectric responses of ferroelectric materials are discussed.

用x射线纳米衍射绘制锆钛酸铅铁电薄膜晶界附近的畴结构。
利用同步加速器纳米衍射研究了电场对200 nm厚Pb(Zr0.2Ti0.8)O3双晶铁电薄膜24°倾斜晶界局部结构的影响。双晶薄膜在srruo3涂层(001)SrTiO3 24°倾斜双晶衬底上外延生长。利用纳米衍射数据,重建了200 kV cm-1电场作用前后晶界周围铁电畴结构的实空间图。在倾斜晶界附近,根据c型和a型畴的衍射强度比和参考粉末衍射数据,计算了c轴与薄膜法线对齐的c型四方畴的密度分布。衍射强度沿晶界平均,结果表明,在晶界±150 nm范围内,c型四方畴的密度降至薄膜体密度的50%。这项工作补充了先前通过带激励压电响应力显微镜获得的结果,表明晶界周围非线性压电响应的减少可能与畴结构的变化以及畴壁运动的增加钉住的可能性有关。讨论了结果和分析在理解晶界对铁电材料非线性压电和介电响应的影响方面的意义。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
CiteScore
10.00
自引率
3.30%
发文量
178
审稿时长
4.7 months
期刊介绍: Many research topics in condensed matter research, materials science and the life sciences make use of crystallographic methods to study crystalline and non-crystalline matter with neutrons, X-rays and electrons. Articles published in the Journal of Applied Crystallography focus on these methods and their use in identifying structural and diffusion-controlled phase transformations, structure-property relationships, structural changes of defects, interfaces and surfaces, etc. Developments of instrumentation and crystallographic apparatus, theory and interpretation, numerical analysis and other related subjects are also covered. The journal is the primary place where crystallographic computer program information is published.
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