Balanced truncation model reduction for laser heating wafer model in frequency restricted domain

Md. Saiduzzaman , Md. Shafiqul Islam , Md. Sumon Hossain , M. Monir Uddin , Mohammad Osman Gani
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Abstract

Modeling and simulating laser heating phenomena are crucial for optimizing manufacturing processes and ensuring high-quality final products. A major challenge in semiconductor manufacturing is achieving accurate, real-time temperature control during wafer heating. To reduce the computational burden of complex mathematical models, low-dimensional reduced models can be employed. In this paper, we develop a mathematical model for laser heating in silicon wafers. For model reduction, we use the balanced truncation method, considering both frequency-unrestricted and restricted cases. Additionally, the rational Krylov subspace method is applied to solve high-dimensional sparse matrix equations. To gain key physical insights, we use the COMSOL Multiphysics package. Finally, some numerical experiments are conducted using MATLAB to validate the proposed approach.
限制频域激光加热晶圆模型的平衡截断模型简化
激光加热现象的建模和模拟对于优化制造工艺和确保高质量的最终产品至关重要。半导体制造的一个主要挑战是在晶圆加热过程中实现精确、实时的温度控制。为了减少复杂数学模型的计算负担,可以采用低维降维模型。本文建立了激光加热硅片的数学模型。对于模型简化,我们使用平衡截断方法,同时考虑了频率不受限制和限制的情况。此外,将有理Krylov子空间方法应用于求解高维稀疏矩阵方程。为了获得关键的物理信息,我们使用COMSOL Multiphysics软件包。最后,利用MATLAB进行了数值实验,验证了该方法的有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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