Md. Saiduzzaman , Md. Shafiqul Islam , Md. Sumon Hossain , M. Monir Uddin , Mohammad Osman Gani
{"title":"Balanced truncation model reduction for laser heating wafer model in frequency restricted domain","authors":"Md. Saiduzzaman , Md. Shafiqul Islam , Md. Sumon Hossain , M. Monir Uddin , Mohammad Osman Gani","doi":"10.1016/j.fraope.2024.100191","DOIUrl":null,"url":null,"abstract":"<div><div>Modeling and simulating laser heating phenomena are crucial for optimizing manufacturing processes and ensuring high-quality final products. A major challenge in semiconductor manufacturing is achieving accurate, real-time temperature control during wafer heating. To reduce the computational burden of complex mathematical models, low-dimensional reduced models can be employed. In this paper, we develop a mathematical model for laser heating in silicon wafers. For model reduction, we use the balanced truncation method, considering both frequency-unrestricted and restricted cases. Additionally, the rational Krylov subspace method is applied to solve high-dimensional sparse matrix equations. To gain key physical insights, we use the COMSOL Multiphysics package. Finally, some numerical experiments are conducted using MATLAB to validate the proposed approach.</div></div>","PeriodicalId":100554,"journal":{"name":"Franklin Open","volume":"9 ","pages":"Article 100191"},"PeriodicalIF":0.0000,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Franklin Open","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S277318632400121X","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Modeling and simulating laser heating phenomena are crucial for optimizing manufacturing processes and ensuring high-quality final products. A major challenge in semiconductor manufacturing is achieving accurate, real-time temperature control during wafer heating. To reduce the computational burden of complex mathematical models, low-dimensional reduced models can be employed. In this paper, we develop a mathematical model for laser heating in silicon wafers. For model reduction, we use the balanced truncation method, considering both frequency-unrestricted and restricted cases. Additionally, the rational Krylov subspace method is applied to solve high-dimensional sparse matrix equations. To gain key physical insights, we use the COMSOL Multiphysics package. Finally, some numerical experiments are conducted using MATLAB to validate the proposed approach.