Ambient-stable and lead-free Cs3Bi2I9−xBrx (0 ≤ x ≤ 9) perovskite films for memristor devices

IF 2.6 3区化学 Q2 CHEMISTRY, MULTIDISCIPLINARY

CrystEngComm Pub Date : 2024-10-31 DOI:10.1039/D4CE00933A

Siyuan Li, Jing Qian, Jiaxin Ma and Xianmin Zhang

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Abstract

In this work, we prepared lead-free Cs₃Bi₂I_9−xBr_x (x = 0, 1, 2, 3, 6, and 9) thin films using a green anti-solvent method under air conditions and used them to fabricate memristors with an Al/Cs₃Bi₂I_9−xBr_x/ITO structure. These memristors exhibited non-volatile and bipolar resistance switching behavior without electroforming. Notably, the bandgap of the Cs₃Bi₂I_9−xBr_x (x = 0, 1, 2, 3, 6, 9) series films was regulated by bromine doping. The switching ratio of devices changed with the films' band gap and increased from 10² to 10³. The resistance state of the Al/Cs₃Bi₂I_9−xBr_x/ITO devices was maintained even after 150 switching cycles and 10⁴ seconds of reading. Moreover, the Al/Cs₃Bi₂Br₉/ITO memristor showed excellent stability in the air after 100 days. This study offers beneficial insights into designing perovskite materials and regulating the performance of perovskite memristors.

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用于忆阻器设备的环境稳定无铅 Cs3Bi2I9-xBrx (0 ≤ x ≤ 9) 包晶薄膜

在这项工作中，我们在空气条件下采用绿色反溶剂法制备了无铅 Cs3Bi2I9-xBrx（x = 0、1、2、3、6 和 9）薄膜，并用它们制造了具有 Al/Cs3Bi2I9-xBrx/ITO 结构的忆阻器。这些忆阻器无需电铸即可表现出非易失性和双极电阻开关行为。值得注意的是，Cs3Bi2I9-xBrx（x = 0、1、2、3、6、9）系列薄膜的带隙受溴掺杂的调节。器件的开关比随着薄膜带隙的变化而变化，从 102 增加到 103。Al/Cs3Bi2I9-xBrx/ITO 器件的电阻状态在经过 150 个开关周期和 104 秒读数后仍然保持不变。此外，Al/Cs3Bi2Br9/ITO 记忆晶闸管在空气中 100 天后仍表现出极佳的稳定性。这项研究为设计包晶材料和调节包晶忆阻器的性能提供了有益的启示。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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