Alloying element Ag modifies the behavior of H and defects in Pd alloys

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Yipeng Li , Jiacheng Ren , Dewang Cui , Zhong-Qun Tian , Jiangfeng Song , Guang Ran
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引用次数: 0

Abstract

Although alloying can significantly increase the hydrogen permeability of palladium (Pd) and solve the problem of hydrogen embrittlement in service, the intrinsic mechanism has not been revealed. Here, we report intuitive differences in the nucleation, growth and distribution of dislocation loops in Pd and PdAg alloys by in-situ hydrogen irradiation in TEM. The results reveal that alloying element Ag not only modifies the behavior of H, but also induces defects to change from the original long-range one-dimensional (1D) diffusion to short-range three-dimensional (3D) diffusion, which significantly delays the aggregation and growth of dislocation loops and reduces the total irradiation damage and H retention. A new strategy to improve hydrogen embrittlement resistance is proposed, i.e., constructing dense dislocation loop bands (or other sinks that can efficiently trap H) in front of grain boundaries to prevent H from diffusing into the grain boundaries.

Abstract Image

合金元素银改变钯合金中 H 和缺陷的行为
虽然合金化能显著提高钯(Pd)的氢渗透性,解决服役中的氢脆问题,但其内在机理尚未揭示。在此,我们通过在 TEM 中进行原位氢辐照,报告了 Pd 和 PdAg 合金中位错环的成核、生长和分布的直观差异。结果表明,合金元素 Ag 不仅改变了氢的行为,还诱导缺陷从原来的长程一维(1D)扩散转变为短程三维(3D)扩散,从而显著延迟了位错环的聚集和生长,降低了总辐照损伤和氢保留率。本文提出了一种提高抗氢脆性能的新策略,即在晶界前构建密集的位错环带(或其他能有效捕获 H 的槽),以防止 H 扩散到晶界中。
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来源期刊
Scripta Materialia
Scripta Materialia 工程技术-材料科学:综合
CiteScore
11.40
自引率
5.00%
发文量
581
审稿时长
34 days
期刊介绍: Scripta Materialia is a LETTERS journal of Acta Materialia, providing a forum for the rapid publication of short communications on the relationship between the structure and the properties of inorganic materials. The emphasis is on originality rather than incremental research. Short reports on the development of materials with novel or substantially improved properties are also welcomed. Emphasis is on either the functional or mechanical behavior of metals, ceramics and semiconductors at all length scales.
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