Reflective Properties of Black Silicon in a Wide Spectral Range

IF 0.5 4区物理与天体物理 Q4 PHYSICS, MULTIDISCIPLINARY

Journal of Contemporary Physics (Armenian Academy of Sciences) Pub Date : 2024-11-18 DOI:10.1134/S106833722470021X

G. Y. Ayvazyan

引用次数: 0

Abstract

The structural and reflective properties (total reflectance and scattering) of black silicon layers formed by reactive ion etching have been studied. Reflectance spectra were determined in the visible, near-infrared, and near-ultraviolet wavelength ranges. The influence of etching duration on the optical behavior of black silicon layers is studied and the possibilities of their use in solar cells and photodetectors are discussed.

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黑硅在宽光谱范围内的反射特性

研究了反应离子蚀刻法形成的黑硅层的结构和反射特性（全反射和散射）。测定了可见光、近红外和近紫外波段的反射光谱。研究了蚀刻持续时间对黑硅层光学行为的影响，并讨论了将其用于太阳能电池和光电探测器的可能性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Contemporary Physics (Armenian Academy of Sciences) PHYSICS, MULTIDISCIPLINARY-

CiteScore

1.00

自引率

66.70%

发文量

审稿时长

6-12 weeks

期刊介绍： Journal of Contemporary Physics (Armenian Academy of Sciences) is a journal that covers all fields of modern physics. It publishes significant contributions in such areas of theoretical and applied science as interaction of elementary particles at superhigh energies, elementary particle physics, charged particle interactions with matter, physics of semiconductors and semiconductor devices, physics of condensed matter, radiophysics and radioelectronics, optics and quantum electronics, quantum size effects, nanophysics, sensorics, and superconductivity.