The general equation of δ direct methods and the novel SMAR algorithm residuals using the absolute value of ρ and the zero conversion of negative ripples.

IF 1.9 4区 材料科学 Q3 CHEMISTRY, MULTIDISCIPLINARY
Jordi Rius
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引用次数: 0

Abstract

The general equation δM(r) = ρ(r) + g(r) of the δ direct methods (δ-GEQ) is established which, when expressed in the form δM(r) - ρ(r) = g(r), is used in the SMAR phasing algorithm [Rius (2020). Acta Cryst A76, 489-493]. It is shown that SMAR is based on the alternating minimization of the two residuals Rρ(χ) = ∫V [ρ(χ) - ρ(Φ)sρ]2 dV and Rδ(Φ) = ∫V mρM(χ) - ρ(Φ)sρ]2 dV in each iteration of the algorithm by maximizing the respective Sρ(Φ) and Sδ(Φ) sum functions. While Rρ(χ) converges to zero, Rδ(Φ) converges, as predicted by the theory, to a positive quantity. These two independent residuals combine δM and ρ each with |ρ| while keeping the same unknowns, leading to overdetermination for diffraction data extending to atomic resolution. At the beginning of a SMAR phase refinement, the zero part of the mρ mask [resulting from the zero conversion of the slightly negative ρ(Φ) values] occupies ∼50% of the unit-cell volume and increases by ∼5% when convergence is reached. The effects on the residuals of the two SMAR phase refinement modes, i.e. only using density functions (slow mode) supplemented by atomic constraints (fast mode), are discussed in detail. Due to its architecture, the SMAR algorithm is particularly well suited for Deep Learning. Another way of using δ-GEQ is by solving it in the form ρ(r) = δM(r) - g(r), which provides a simple new derivation of the already known δM tangent formula, the core of the δ recycling phasing algorithm [Rius (2012). Acta Cryst. A68, 399-400]. The nomenclature used here is: (i) Φ is the set of φ structure factor phases of ρ to be refined; (ii) δM(χ) = FT-1{c(|E| - 〈|E|〉)×exp(iα)} with χ = {α}, the set of phases of |ρ| and c = scaling constant; (iii) mρ = mask, being either 0 or 1; sρ is 1 or -1 depending on whether ρ(Φ) is positive or negative.

使用 ρ 的绝对值和负波纹的零点转换的 δ 直接方法和新型 SMAR 算法残差的一般方程。
建立了 δ 直接方法(δ-GEQ)的一般公式 δM(r) = ρ(r) + g(r),以 δM(r) - ρ(r) = g(r) 的形式表示时,它被用于 SMAR 分相算法[Rius (2020). Acta Cryst A76, 489-493]。研究表明,SMAR 基于两个残差 Rρ(χ) = ∫V [ρ(χ) - ρ(Φ)sρ]2 dV 和 Rδ(Φ) = ∫V mρ[δM(χ) - ρ(Φ)sρ]2 dV 的交替最小化。ρ(Φ)sρ]2 dV 在算法的每次迭代中,通过最大化各自的 Sρ(Φ)和 Sδ(Φ)和函数来实现。Rρ(χ) 收敛为零,而 Rδ(Φ) 则如理论预测的那样,收敛为正数。这两个独立的残差将 δM 和 ρ 分别与 |ρ| 结合在一起,同时保留相同的未知数,从而导致衍射数据的过确定性扩展到原子分辨率。在 SMAR 相细化开始时,mρ 掩膜的零部分[由轻微负的ρ(Φ) 值的零转换产生]占单位晶胞体积的 ∼50%,当达到收敛时,零部分会增加 ∼5%。详细讨论了两种 SMAR 相细化模式(即仅使用密度函数(慢速模式),辅以原子约束(快速模式))对残差的影响。由于其架构,SMAR 算法特别适合深度学习。使用 δ-GEQ 的另一种方法是以ρ(r) = δM(r) - g(r) 的形式求解,这为已知的 δM 正切公式提供了一个简单的新推导,δM 正切公式是 δ 循环相位算法的核心[Rius (2012). Acta Cryst. A68, 399-400]。这里使用的术语是(i) Φ 是待细化的 ρ 的 φ 结构因子相集;(ii) δM(χ) = FT-1{c(|E| - 〈E||〉)×exp(iα)},其中 χ = {α},是 |ρ| 的相集,c = 缩放常数;(iii) mρ = 掩码,为 0 或 1;sρ 为 1 或-1,取决于 ρ(Φ) 是正值还是负值。
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来源期刊
Acta Crystallographica Section A: Foundations and Advances
Acta Crystallographica Section A: Foundations and Advances CHEMISTRY, MULTIDISCIPLINARYCRYSTALLOGRAPH-CRYSTALLOGRAPHY
CiteScore
2.60
自引率
11.10%
发文量
419
期刊介绍: Acta Crystallographica Section A: Foundations and Advances publishes articles reporting advances in the theory and practice of all areas of crystallography in the broadest sense. As well as traditional crystallography, this includes nanocrystals, metacrystals, amorphous materials, quasicrystals, synchrotron and XFEL studies, coherent scattering, diffraction imaging, time-resolved studies and the structure of strain and defects in materials. The journal has two parts, a rapid-publication Advances section and the traditional Foundations section. Articles for the Advances section are of particularly high value and impact. They receive expedited treatment and may be highlighted by an accompanying scientific commentary article and a press release. Further details are given in the November 2013 Editorial. The central themes of the journal are, on the one hand, experimental and theoretical studies of the properties and arrangements of atoms, ions and molecules in condensed matter, periodic, quasiperiodic or amorphous, ideal or real, and, on the other, the theoretical and experimental aspects of the various methods to determine these properties and arrangements.
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