Type-II induced quantum confinement in type-I heterostructured semiconductor nanowires

IF 2.9 3区物理与天体物理 Q3 NANOSCIENCE & NANOTECHNOLOGY

Physica E-low-dimensional Systems & Nanostructures Pub Date : 2024-10-28 DOI:10.1016/j.physe.2024.116132

Temerson F.O. Lara , Diego R. da Costa , Alice R. de Almeida , Ariel A. de Sousa , André J. Chaves , Andrey Chaves , Teldo A.S. Pereira

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Abstract

We theoretically investigate the electronic properties of semiconductor nanowires with axial heterostructure. We employ the effective mass approximation within envelope wavefunction formalism to analyze the behavior of charge carriers in nanowires composed of two semiconductor materials with different energy gaps, grown along the wire axis, with a cylindrically symmetric shape. We start by considering a type-I band alignment, resulting in the formation of a quantum well structure. Then, we demonstrate that modifications in the effective mass and the structural parameters of the system make it possible to change the type of the band alignment, thus dictating the carrier confinement. For certain values of the wire radius and the ratio of effective masses between the well and barrier regions, the contribution of the kinetic energy term to the total effective confinement potential becomes predominant compared to the mismatched band potential. This leads to a switching in the preferential spatial distribution of the wave functions towards the barrier region, exhibiting characteristics of a type-II induced axial junction.

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I 型异质结构半导体纳米线中的 II 型诱导量子约束

我们从理论上研究了具有轴向异质结构的半导体纳米线的电子特性。我们采用包络波函数形式主义中的有效质量近似来分析电荷载流子在由两种具有不同能隙的半导体材料组成的纳米线中的行为，这些纳米线沿着线轴生长，具有圆柱对称的形状。我们首先考虑 I 型带排列，从而形成量子阱结构。然后，我们证明，通过改变系统的有效质量和结构参数，可以改变带排列的类型，从而决定载流子约束。对于一定的线半径值以及阱区和势垒区之间的有效质量比，动能项对总有效禁锢势的贡献与失配带势相比变得占主导地位。这导致波函数的优先空间分布转向势垒区，表现出 II 型诱导轴向结的特征。

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来源期刊

Physica E-low-dimensional Systems & Nanostructures 物理-纳米科技

CiteScore

7.30

自引率

6.10%

发文量

356

审稿时长

65 days

期刊介绍： Physica E: Low-dimensional systems and nanostructures contains papers and invited review articles on the fundamental and applied aspects of physics in low-dimensional electron systems, in semiconductor heterostructures, oxide interfaces, quantum wells and superlattices, quantum wires and dots, novel quantum states of matter such as topological insulators, and Weyl semimetals. Both theoretical and experimental contributions are invited. Topics suitable for publication in this journal include spin related phenomena, optical and transport properties, many-body effects, integer and fractional quantum Hall effects, quantum spin Hall effect, single electron effects and devices, Majorana fermions, and other novel phenomena. Keywords: • topological insulators/superconductors, majorana fermions, Wyel semimetals; • quantum and neuromorphic computing/quantum information physics and devices based on low dimensional systems; • layered superconductivity, low dimensional systems with superconducting proximity effect; • 2D materials such as transition metal dichalcogenides; • oxide heterostructures including ZnO, SrTiO3 etc; • carbon nanostructures (graphene, carbon nanotubes, diamond NV center, etc.) • quantum wells and superlattices; • quantum Hall effect, quantum spin Hall effect, quantum anomalous Hall effect; • optical- and phonons-related phenomena; • magnetic-semiconductor structures; • charge/spin-, magnon-, skyrmion-, Cooper pair- and majorana fermion- transport and tunneling; • ultra-fast nonlinear optical phenomena; • novel devices and applications (such as high performance sensor, solar cell, etc); • novel growth and fabrication techniques for nanostructures