Review and analysis on numerical simulation and compact modeling of InGaZno thin-film transistor for display SENSOR applications

Q4 Engineering
Kadiyam Anusha, A.D.D. Dwivedi
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引用次数: 0

Abstract

Recent years have seen an increase in the use of Organic Thin Film Transistors (OTFTs), with applications ranging from flexible, low-cost displays to organic memory, RFID tag components, low-cost electronic appliances, and polymer circuits and sensors. Thin-film transistors (TFTs) have developed into a critical business on the grounds levels to their wide scope of utilizations in display; Radio-Frequency ID labels (RFID SENSOR), intelligent computation, and different areas. Reduced models are basic in the turn of events and execution of TFTs on the grounds that they overcome any barrier between the manufacture cycle and circuit plan. The motivation behind this exploration is to assemble a hypothetical structure for nanoscale TFT models made of polysilicon, indistinct silicon, natural, and In-Ga-Zn-O (IGZO) semiconductors. Extraordinary consideration is paid to surface-expected based smaller models of silicon-based TFTs. Surface-potential-based compact models and parameter extraction approaches were presented based on our knowledge of charge transport characteristics and TFT needs in organic and IGZO TFTs.
用于显示传感器应用的 InGaZno 薄膜晶体管的数值模拟和紧凑建模回顾与分析
近年来,有机薄膜晶体管 (OTFT) 的应用日益广泛,从柔性低成本显示器到有机存储器、RFID 标签元件、低成本电子设备以及聚合物电路和传感器,无所不包。薄膜晶体管(TFT)在显示器、射频识别标签(RFID SENSOR)、智能计算和其他领域的广泛应用使其发展成为一项重要业务。缩减模型是 TFT 转换和执行的基础,因为它们克服了制造周期和电路计划之间的任何障碍。这项探索的动机是为由多晶硅、非晶硅、天然和 In-Ga-Zn-O (IGZO) 半导体制成的纳米级 TFT 模型建立一个假设结构。我们特别考虑了基于表面预期的硅基 TFT 小型模型。根据我们对有机和 IGZO TFT 的电荷传输特性和 TFT 需求的了解,介绍了基于表面电位的紧凑模型和参数提取方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Measurement Sensors
Measurement Sensors Engineering-Industrial and Manufacturing Engineering
CiteScore
3.10
自引率
0.00%
发文量
184
审稿时长
56 days
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