M. N. Chagin, E. N. Ermakova, V. R. Shayapov, V. S. Sulyaeva, I. V. Yushina, E. A. Maksimovskiy, S. P. Dudkina, A. A. Saraev, E. Y. Gerasimov, K. P. Mogilnikov, A. N. Kolodin, M. L. Kosinova
{"title":"SiCx:H and SiCxNy:H Amorphous Films Prepared from Hexamethyldisilane Vapors","authors":"M. N. Chagin, E. N. Ermakova, V. R. Shayapov, V. S. Sulyaeva, I. V. Yushina, E. A. Maksimovskiy, S. P. Dudkina, A. A. Saraev, E. Y. Gerasimov, K. P. Mogilnikov, A. N. Kolodin, M. L. Kosinova","doi":"10.1134/S0022476624100147","DOIUrl":null,"url":null,"abstract":"<p>Amorphous transparent SiC<sub><i>x</i></sub>:H and SiC<sub><i>x</i></sub>N<sub><i>y</i></sub>:H films are prepared at a temperature of 200 °C and a discharge power of 200 W in an inductively coupled RF plasma reactor using hexamethyldisilane vapors and additional argon and/or nitrogen gases. The influence of N<sub>2</sub> flow rate on the morphology, chemical structure, elemental composition, transmittance, refractive index, contact angle, and film deposition rate is studied. Plasma components are determined by optical emission spectroscopy. It is shown by HRTEM and EDS mapping methods that the annealed Cu/SiC<sub><i>x</i></sub>:H/Si(100) sample has distinct substrate/film and film/copper layer interfaces, no Cu diffusion occurs, and that the SiC<sub><i>x</i></sub>:H the film can be considered as a promising diffusion barrier layer. Stability of the films during storage under ambient conditions is studied. The tendency of SiC<sub><i>x</i></sub>N<sub><i>y</i></sub>:H films to oxidize is revealed by EDS, IR spectroscopy, and XPS.</p>","PeriodicalId":668,"journal":{"name":"Journal of Structural Chemistry","volume":"65 10","pages":"2041 - 2057"},"PeriodicalIF":1.2000,"publicationDate":"2024-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Structural Chemistry","FirstCategoryId":"92","ListUrlMain":"https://link.springer.com/article/10.1134/S0022476624100147","RegionNum":4,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"CHEMISTRY, INORGANIC & NUCLEAR","Score":null,"Total":0}
引用次数: 0
Abstract
Amorphous transparent SiCx:H and SiCxNy:H films are prepared at a temperature of 200 °C and a discharge power of 200 W in an inductively coupled RF plasma reactor using hexamethyldisilane vapors and additional argon and/or nitrogen gases. The influence of N2 flow rate on the morphology, chemical structure, elemental composition, transmittance, refractive index, contact angle, and film deposition rate is studied. Plasma components are determined by optical emission spectroscopy. It is shown by HRTEM and EDS mapping methods that the annealed Cu/SiCx:H/Si(100) sample has distinct substrate/film and film/copper layer interfaces, no Cu diffusion occurs, and that the SiCx:H the film can be considered as a promising diffusion barrier layer. Stability of the films during storage under ambient conditions is studied. The tendency of SiCxNy:H films to oxidize is revealed by EDS, IR spectroscopy, and XPS.
期刊介绍:
Journal is an interdisciplinary publication covering all aspects of structural chemistry, including the theory of molecular structure and chemical bond; the use of physical methods to study the electronic and spatial structure of chemical species; structural features of liquids, solutions, surfaces, supramolecular systems, nano- and solid materials; and the crystal structure of solids.