Indium–Gallium–Zinc Oxide: Influence of the Complexing Agent on the Structure

Abstract

The In₂O₃–Ga₂O₃–ZnO ternary oxide is prospective for electronics applications. Promising methods of fabricating In₂O₃–Ga₂O₃–ZnO based transistors require a technique for the preparation of X-ray pure powders. Data on the influence of the studied organic complexing agent on the morphology of obtained powders are reported. It is shown that ethylene glycol is more preferable to use than citric acid since the powders prepared in the first case contain no admixture phases.