Effects of Metal Ions on Sb2Se3 Thin Films and Their Photoelectric Properties

IF 3.3 3区化学 Q2 CHEMISTRY, PHYSICAL

The Journal of Physical Chemistry C Pub Date : 2024-11-07 DOI:10.1021/acs.jpcc.4c05543

Yaxin Guo, Xiaoqian Jing, Dayuan Cai, Dongyun Li, Rui Wang, Fan Wang, Hongliang Ge, Yang Xu

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Abstract

Sb₂Se₃ is a new type of semiconductor material with excellent photoelectric properties. However, it suffers from poor carrier transport and separation abilities, significantly hindering its development. Metal-ion doping has been identified as an effective solution to address the low carrier concentration issue in Sb₂Se₃, leading to a substantial increase in the carrier concentration. This study employed a simple, cost-effective hydrothermal method to prepare antimony selenide films and introduced Mg²⁺ conducting ions to enhance the transport and separation abilities of the carriers. The effects of Mg²⁺ metal ions on the phase structure, morphology, and photoelectric properties of antimony selenide films were investigated. The results demonstrate that Mg²⁺ doping promotes the lengthwise growth of antimony selenide rods and facilitates carrier transfer, enabling the efficient separation of photogenerated carriers. Among the different doping levels tested, 0.1 mmol of Mg²⁺ doping exhibited the best photoelectric performance.

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金属离子对 Sb2Se3 薄膜及其光电特性的影响

Sb2Se3 是一种新型半导体材料，具有优异的光电特性。然而，它的载流子传输和分离能力较差，严重阻碍了其发展。金属离子掺杂被认为是解决 Sb2Se3 载流子浓度低问题的有效方法，它能大幅提高载流子浓度。本研究采用简单、经济的水热法制备硒化锑薄膜，并引入 Mg2+ 导电离子以提高载流子的传输和分离能力。研究了 Mg2+ 金属离子对硒化锑薄膜的相结构、形貌和光电特性的影响。结果表明，Mg2+ 的掺杂促进了硒化锑棒的纵向生长，并有利于载流子的传输，使光生载流子得以有效分离。在测试的不同掺杂水平中，掺杂 0.1 mmol Mg2+ 的光电性能最佳。

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来源期刊

The Journal of Physical Chemistry C 化学-材料科学：综合

CiteScore

6.50

自引率

8.10%

发文量

2047

审稿时长

1.8 months

期刊介绍： The Journal of Physical Chemistry A/B/C is devoted to reporting new and original experimental and theoretical basic research of interest to physical chemists, biophysical chemists, and chemical physicists.