{"title":"Surface evolution mechanism for atomic-scale smoothing of Si via atmospheric pressure plasma etching","authors":"","doi":"10.1016/j.jmapro.2024.10.080","DOIUrl":null,"url":null,"abstract":"<div><div>Atmospheric plasma etching-based machining methods generally suffer from surface roughness deterioration. To achieve an atomic-scale smooth surface of Si via purely plasma etching, clarifying the etching evolution and mechanism is essential. In this study, we study surface evolution and smoothening mechanisms from the perspective of plasma etching modes comprehensively. The morphology and roughness evolutions of isotropic, orientation-selective, and atom-selective etching are investigated, respectively. The semi-finishing effect is realized through the growing and merging of hemispherical pits during isotropic etching, with the surface roughness being reduced from 103 nm to 0.79 nm. Orientation-selective etching is a roughening process, transforming square-opening pits into pyramid structures. Under the atom-selective mode, an atomically smooth surface with <em>S</em>a 0.17 nm can be obtained. The top-down smoothing process of atom-selective is much more efficient than isotropic etching. Atom-selective etching with a maximum removal rate of 22 μm/min enables the rapid thinning of Si substrate thickness from 715 μm to 90.4 μm within 45 min. Additionally, atom-selective etching is a universal polishing approach regardless of pre-processed methods and is a damage-less process. This paper provides a promising strategy for atomic and close-to-atomic scale manufacturing.</div></div>","PeriodicalId":16148,"journal":{"name":"Journal of Manufacturing Processes","volume":null,"pages":null},"PeriodicalIF":6.1000,"publicationDate":"2024-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Manufacturing Processes","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1526612524011228","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, MANUFACTURING","Score":null,"Total":0}
引用次数: 0
Abstract
Atmospheric plasma etching-based machining methods generally suffer from surface roughness deterioration. To achieve an atomic-scale smooth surface of Si via purely plasma etching, clarifying the etching evolution and mechanism is essential. In this study, we study surface evolution and smoothening mechanisms from the perspective of plasma etching modes comprehensively. The morphology and roughness evolutions of isotropic, orientation-selective, and atom-selective etching are investigated, respectively. The semi-finishing effect is realized through the growing and merging of hemispherical pits during isotropic etching, with the surface roughness being reduced from 103 nm to 0.79 nm. Orientation-selective etching is a roughening process, transforming square-opening pits into pyramid structures. Under the atom-selective mode, an atomically smooth surface with Sa 0.17 nm can be obtained. The top-down smoothing process of atom-selective is much more efficient than isotropic etching. Atom-selective etching with a maximum removal rate of 22 μm/min enables the rapid thinning of Si substrate thickness from 715 μm to 90.4 μm within 45 min. Additionally, atom-selective etching is a universal polishing approach regardless of pre-processed methods and is a damage-less process. This paper provides a promising strategy for atomic and close-to-atomic scale manufacturing.
期刊介绍:
The aim of the Journal of Manufacturing Processes (JMP) is to exchange current and future directions of manufacturing processes research, development and implementation, and to publish archival scholarly literature with a view to advancing state-of-the-art manufacturing processes and encouraging innovation for developing new and efficient processes. The journal will also publish from other research communities for rapid communication of innovative new concepts. Special-topic issues on emerging technologies and invited papers will also be published.