Features of current flow in the n-CoFe2O4/n-CdTe heterojunction

IF 2.1 4区物理与天体物理 Q3 PHYSICS, CONDENSED MATTER

Solid State Communications Pub Date : 2024-11-04 DOI:10.1016/j.ssc.2024.115749

Ivan G. Orletskyi, Ivan P. Koziarskyi, Maya V. Koval, Maria I. Ilashchuk, Eduard V. Maistruk, Dmytro P. Koziarskyi

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Abstract

n-CoFe₂O₄/n-CdTe heterojunctions with a current rectification ratio of 3·10⁵ at voltages |V| = 1.5 V were made by spray pyrolysis of aqueous solutions of cobalt and iron salts on n-CdTe substrates. Based on the analysis of the temperature dependence of I-V-characteristics in the forward voltage range, a change in the mechanisms of current flow in n-CoFe₂O₄/n-CdTe heterojunctions was established from overbarrier at voltages of 3kT/q < V < 0.3 V to tunneling at voltages of 0.4 V < V < 1 V. The role of surface states in the formation of the energy profile of the heterojunction and the participation of energy levels in the band gap of n-CdTe in the formation of the tunnel current have been clarified. The reasons for the occurrence of negative differential resistance at the forward biases of the structure have been clarified. The current at reverse biases in the range −3 V < V < -3kT/q was analyzed. According to the analysis of the C-V-characteristics, an inversion layer was found in the heterojunction and its behavior from voltage was explained.

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n-CoFe2O4/n-CdTe 异质结中的电流特征

通过在 n-CdTe 基底上喷射热解钴盐和铁盐的水溶液，制备了在电压 |V| = 1.5 V 时电流整流比为 3-105 的 n-CoFe2O4/n-CdTe 异质结。根据对正向电压范围内 I-V 特性的温度依赖性分析，确定了 n-CoFe2O4/n-CdTe 异质结中电流流动机制的变化：从电压为 3kT/q < V < 0.澄清了表面态在异质结能谱形成中的作用，以及 n-CdTe 带隙中的能级在隧道电流形成中的参与。澄清了该结构在正向偏压下出现负微分电阻的原因。分析了反向偏压在 -3 V < V < -3kT/q 范围内的电流。根据对 C-V 特性的分析，在异质结中发现了一个反转层，并解释了它在电压下的行为。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid State Communications 物理-物理：凝聚态物理

CiteScore

3.40

自引率

4.80%

发文量

287

审稿时长

51 days

期刊介绍： Solid State Communications is an international medium for the publication of short communications and original research articles on significant developments in condensed matter science, giving scientists immediate access to important, recently completed work. The journal publishes original experimental and theoretical research on the physical and chemical properties of solids and other condensed systems and also on their preparation. The submission of manuscripts reporting research on the basic physics of materials science and devices, as well as of state-of-the-art microstructures and nanostructures, is encouraged. A coherent quantitative treatment emphasizing new physics is expected rather than a simple accumulation of experimental data. Consistent with these aims, the short communications should be kept concise and short, usually not longer than six printed pages. The number of figures and tables should also be kept to a minimum. Solid State Communications now also welcomes original research articles without length restrictions. The Fast-Track section of Solid State Communications is the venue for very rapid publication of short communications on significant developments in condensed matter science. The goal is to offer the broad condensed matter community quick and immediate access to publish recently completed papers in research areas that are rapidly evolving and in which there are developments with great potential impact.