Enhanced physical, electrical, and structural properties of chitosan thin films doped with Ag@ZnO nanoparticles for energy storage applications

IF 4.3 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Chemistry and Physics Pub Date : 2024-10-15 DOI:10.1016/j.matchemphys.2024.130003

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Abstract

Chitosan thin films doped with varying concentrations (0, 2, 5, 7, and 10 %) of silver-doped zinc oxide (Ag@ZnO) nanoparticles (NPs) were synthesized using the Solution Casting method. Analyses revealed that increased doping enhanced the films’ physical, electrical, and structural properties. X-ray diffraction (XRD) confirmed the wurtzite hexagonal structure of Ag@ZnO NPs. Photoluminescence showed charge transfer between chitosan and NPs, with emissions in the blue and violet ranges. UV–VIS spectroscopy indicated improved barrier effects, while Tauc plot analysis showed a decrease in the band gap with higher doping. Fourier-transform infrared (FT-IR) analysis confirmed strong interactions between chitosan and nanoparticles. Impedance testing demonstrated increased conductivity with higher Ag@ZnO NP concentrations. These results suggest that doping chitosan films with Ag@ZnO NPs effectively modulates impedance and conductivity while maintaining flexibility, making them suitable for efficient electrolyte separators in supercapacitors.

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增强掺杂 Ag@ZnO 纳米粒子的壳聚糖薄膜的物理、电气和结构特性，用于储能应用

采用溶液浇铸法合成了掺有不同浓度（0、2、5、7 和 10 %）银掺杂氧化锌（Ag@ZnO）纳米粒子（NPs）的壳聚糖薄膜。分析表明，掺杂量的增加增强了薄膜的物理、电气和结构特性。X 射线衍射 (XRD) 证实了 Ag@ZnO NPs 的六方菱形结构。光致发光显示了壳聚糖和氮氧化物之间的电荷转移，并在蓝色和紫色范围内发射。紫外-可见光谱显示阻挡效应有所改善，而陶氏图谱分析则显示随着掺杂量的增加，带隙有所减小。傅立叶变换红外（FT-IR）分析证实壳聚糖和纳米粒子之间存在很强的相互作用。阻抗测试表明，Ag@ZnO NP 浓度越高，导电性越强。这些结果表明，在壳聚糖薄膜中掺入 Ag@ZnO NPs 可有效调节阻抗和电导率，同时保持其柔韧性，使其适用于超级电容器中的高效电解质分离器。

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来源期刊

Materials Chemistry and Physics 工程技术-材料科学：综合

CiteScore

8.70

自引率

4.30%

发文量

1515

审稿时长

69 days

期刊介绍： Materials Chemistry and Physics is devoted to short communications, full-length research papers and feature articles on interrelationships among structure, properties, processing and performance of materials. The Editors welcome manuscripts on thin films, surface and interface science, materials degradation and reliability, metallurgy, semiconductors and optoelectronic materials, fine ceramics, magnetics, superconductors, specialty polymers, nano-materials and composite materials.