Xin-Yu Yu , Qian Wang , Hui-Lin Li , Yi-Jun Wan , En-Meng Liang , Chun-Ming Wang
{"title":"Rare-earth praseodymium-substituted Bi5Ti3FeO15 exhibiting enhanced piezoelectric properties for high-temperature application","authors":"Xin-Yu Yu , Qian Wang , Hui-Lin Li , Yi-Jun Wan , En-Meng Liang , Chun-Ming Wang","doi":"10.1016/j.chphma.2024.06.007","DOIUrl":null,"url":null,"abstract":"<div><div>Owing to their exceptional piezoelectric effects, piezoelectric materials play a crucial role in high-end technologies and contribute significantly to the national economy. Bismuth layer-structured ferroelectrics (BLSFs) possess high Curie temperatures, making them a focal point of research in high-temperature piezoelectric sensor devices. However, their poor piezoelectric performance and low direct-current (DC) electrical resistivity hinder their effective deployment in high-temperature applications. To overcome these shortcomings, we employed composition optimization by partially substituting bismuth ions with rare-earth praseodymium ions. This approach enhances the piezoelectric performance and improves the DC electrical resistivity by preventing the loss of volatile bismuth ions and stabilizing the bismuth oxide layer (Bi<sub>2</sub>O<sub>2</sub>)<sup>2+</sup>, thereby reducing the concentration of oxygen vacancies. Consequently, we achieved a large piezoelectric constant <em>d</em><sub>33</sub> of 23.5 pC/N in praseodymium-substituted Bi<sub>5</sub>Ti<sub>3</sub>FeO<sub>15</sub>, which is three times higher than that of pure Bi<sub>5</sub>Ti<sub>3</sub>FeO<sub>15</sub> (7.1 pC/N), along with a high Curie temperature <em>T</em><sub>C</sub> of 778 °C. Additionally, the optimal composition of 4 mol% praseodymium-substituted Bi<sub>5</sub>Ti<sub>3</sub>FeO<sub>15</sub> exhibits good thermal stability of electromechanical coupling characteristics up to 300 °C. This study holds promise for a wide array of high-temperature piezoelectric applications and has the potential to accelerate the development of high-temperature piezoelectric sensor technologies.</div></div>","PeriodicalId":100236,"journal":{"name":"ChemPhysMater","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ChemPhysMater","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2772571524000305","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Owing to their exceptional piezoelectric effects, piezoelectric materials play a crucial role in high-end technologies and contribute significantly to the national economy. Bismuth layer-structured ferroelectrics (BLSFs) possess high Curie temperatures, making them a focal point of research in high-temperature piezoelectric sensor devices. However, their poor piezoelectric performance and low direct-current (DC) electrical resistivity hinder their effective deployment in high-temperature applications. To overcome these shortcomings, we employed composition optimization by partially substituting bismuth ions with rare-earth praseodymium ions. This approach enhances the piezoelectric performance and improves the DC electrical resistivity by preventing the loss of volatile bismuth ions and stabilizing the bismuth oxide layer (Bi2O2)2+, thereby reducing the concentration of oxygen vacancies. Consequently, we achieved a large piezoelectric constant d33 of 23.5 pC/N in praseodymium-substituted Bi5Ti3FeO15, which is three times higher than that of pure Bi5Ti3FeO15 (7.1 pC/N), along with a high Curie temperature TC of 778 °C. Additionally, the optimal composition of 4 mol% praseodymium-substituted Bi5Ti3FeO15 exhibits good thermal stability of electromechanical coupling characteristics up to 300 °C. This study holds promise for a wide array of high-temperature piezoelectric applications and has the potential to accelerate the development of high-temperature piezoelectric sensor technologies.